Gapless Semiconductors, a New Class of Materials / / I. M. Tsidilkovski.

• VerfasserIn: Tsidilkovski, I. M.,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2022]; ©1988
• Year of Publication: 2022
• Edition: Reprint 2022
• Language: German
• Series: Physical Research ; 7
• Physical Description: 1 online resource (140 p.) :; With 36 Figures

Table of Contents

• Frontmatter
• PREFACE
• CONTENTS
• CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS
• 1.1. The Problem of the Electronic States in Solids
• 1.2. The Tight-Binding Approximation
• 1.3. The Nearly Free Electron Approximation
• 1.4. Effective Mass and-the Density of States
• 1.5.Impurity Levels. Statistics
• Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS
• 2.1. The Detection of the Gapless State
• 2.2. Gray Tin
• 2.3. Mercury Chalcogenides HgTe and HgSe
• CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS
• 3.1. The Problem of Residual Electron Concentration
• 3.2. Impurities and Native Defects in Mercury Chalcogenides
• 3.3. Energy of Impurity States
• 3.4. Metal-Insulator Transitions
• 3.5. Mott Transition in n-Type Crystals
• 3.6. The Effect of Compensation on the Mott Transition
• 3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration
• 3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure
• 3.9. Low-Temperature Peculiarities of Conductivity
• 3.10. Gapless Semiconductors Containing Magnetic Ions
• CONCLUSION
• Practical Applications of Gapless Semiconductors
• Some Results and Prospects
• REFERENCES
• Backmatter