Gapless Semiconductors, a New Class of Materials / / I. M. Tsidilkovski.

• VerfasserIn: Tsidilkovski, I. M.,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2022]; ©1988
• Year of Publication: 2022
• Edition: Reprint 2022
• Language: German
• Series: Physical Research ; 7
• Physical Description: 1 online resource (140 p.) :; With 36 Figures

Table of Contents

Frontmatter -- PREFACE -- CONTENTS -- CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS -- 1.1. The Problem of the Electronic States in Solids -- 1.2. The Tight-Binding Approximation -- 1.3. The Nearly Free Electron Approximation -- 1.4. Effective Mass and-the Density of States -- 1.5.Impurity Levels. Statistics -- Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS -- 2.1. The Detection of the Gapless State -- 2.2. Gray Tin -- 2.3. Mercury Chalcogenides HgTe and HgSe -- CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS -- 3.1. The Problem of Residual Electron Concentration -- 3.2. Impurities and Native Defects in Mercury Chalcogenides -- 3.3. Energy of Impurity States -- 3.4. Metal-Insulator Transitions -- 3.5. Mott Transition in n-Type Crystals -- 3.6. The Effect of Compensation on the Mott Transition -- 3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration -- 3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure -- 3.9. Low-Temperature Peculiarities of Conductivity -- 3.10. Gapless Semiconductors Containing Magnetic Ions -- CONCLUSION -- Practical Applications of Gapless Semiconductors -- Some Results and Prospects -- REFERENCES -- Backmatter