Gapless Semiconductors, a New Class of Materials / / I. M. Tsidilkovski.
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| Place / Publishing House: | Berlin ;, Boston : : De Gruyter, , [2022] ©1988 |
| Year of Publication: | 2022 |
| Edition: | Reprint 2022 |
| Language: | German |
| Series: | Physical Research ;
7 |
| Online Access: | |
| Physical Description: | 1 online resource (140 p.) :; With 36 Figures |
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| LEADER | 03194nam a22005535i 4500 | ||
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| 001 | 9783112643143 | ||
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| 024 | 7 | |a 10.1515/9783112643143 |2 doi | |
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| 100 | 1 | |a Tsidilkovski, I. M., |e author. |4 aut |4 http://id.loc.gov/vocabulary/relators/aut | |
| 245 | 1 | 0 | |a Gapless Semiconductors, a New Class of Materials / |c I. M. Tsidilkovski. |
| 250 | |a Reprint 2022 | ||
| 264 | 1 | |a Berlin ; |a Boston : |b De Gruyter, |c [2022] | |
| 264 | 4 | |c ©1988 | |
| 300 | |a 1 online resource (140 p.) : |b With 36 Figures | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 0 | |a Physical Research ; |v 7 | |
| 505 | 0 | 0 | |t Frontmatter -- |t PREFACE -- |t CONTENTS -- |t CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS -- |t 1.1. The Problem of the Electronic States in Solids -- |t 1.2. The Tight-Binding Approximation -- |t 1.3. The Nearly Free Electron Approximation -- |t 1.4. Effective Mass and-the Density of States -- |t 1.5.Impurity Levels. Statistics -- |t Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS -- |t 2.1. The Detection of the Gapless State -- |t 2.2. Gray Tin -- |t 2.3. Mercury Chalcogenides HgTe and HgSe -- |t CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS -- |t 3.1. The Problem of Residual Electron Concentration -- |t 3.2. Impurities and Native Defects in Mercury Chalcogenides -- |t 3.3. Energy of Impurity States -- |t 3.4. Metal-Insulator Transitions -- |t 3.5. Mott Transition in n-Type Crystals -- |t 3.6. The Effect of Compensation on the Mott Transition -- |t 3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration -- |t 3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure -- |t 3.9. Low-Temperature Peculiarities of Conductivity -- |t 3.10. Gapless Semiconductors Containing Magnetic Ions -- |t CONCLUSION -- |t Practical Applications of Gapless Semiconductors -- |t Some Results and Prospects -- |t REFERENCES -- |t Backmatter |
| 506 | 0 | |a restricted access |u http://purl.org/coar/access_right/c_16ec |f online access with authorization |2 star | |
| 530 | |a Issued also in print. | ||
| 538 | |a Mode of access: Internet via World Wide Web. | ||
| 546 | |a In German. | ||
| 588 | 0 | |a Description based on online resource; title from PDF title page (publisher's Web site, viewed 30. Aug 2022) | |
| 650 | 7 | |a NON-CLASSIFIABLE. |2 bisacsh | |
| 776 | 0 | |c print |z 9783112643136 | |
| 856 | 4 | 0 | |u https://doi.org/10.1515/9783112643143 |
| 856 | 4 | 0 | |u https://www.degruyter.com/isbn/9783112643143 |
| 856 | 4 | 2 | |3 Cover |u https://www.degruyter.com/document/cover/isbn/9783112643143/original |
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