Gapless Semiconductors, a New Class of Materials / / I. M. Tsidilkovski.

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Place / Publishing House:Berlin ;, Boston : : De Gruyter, , [2022]
©1988
Year of Publication:2022
Edition:Reprint 2022
Language:German
Series:Physical Research ; 7
Online Access:
Physical Description:1 online resource (140 p.) :; With 36 Figures
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Description
Other title:Frontmatter --
PREFACE --
CONTENTS --
CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS --
1.1. The Problem of the Electronic States in Solids --
1.2. The Tight-Binding Approximation --
1.3. The Nearly Free Electron Approximation --
1.4. Effective Mass and-the Density of States --
1.5.Impurity Levels. Statistics --
Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS --
2.1. The Detection of the Gapless State --
2.2. Gray Tin --
2.3. Mercury Chalcogenides HgTe and HgSe --
CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS --
3.1. The Problem of Residual Electron Concentration --
3.2. Impurities and Native Defects in Mercury Chalcogenides --
3.3. Energy of Impurity States --
3.4. Metal-Insulator Transitions --
3.5. Mott Transition in n-Type Crystals --
3.6. The Effect of Compensation on the Mott Transition --
3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration --
3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure --
3.9. Low-Temperature Peculiarities of Conductivity --
3.10. Gapless Semiconductors Containing Magnetic Ions --
CONCLUSION --
Practical Applications of Gapless Semiconductors --
Some Results and Prospects --
REFERENCES --
Backmatter
Format:Mode of access: Internet via World Wide Web.
ISBN:9783112643143
DOI:10.1515/9783112643143
Access:restricted access
Hierarchical level:Monograph
Statement of Responsibility: I. M. Tsidilkovski.