Gapless Semiconductors, a New Class of Materials / / I. M. Tsidilkovski.
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Place / Publishing House: | Berlin ;, Boston : : De Gruyter, , [2022] ©1988 |
Year of Publication: | 2022 |
Edition: | Reprint 2022 |
Language: | German |
Series: | Physical Research ;
7 |
Online Access: | |
Physical Description: | 1 online resource (140 p.) :; With 36 Figures |
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Other title: | Frontmatter -- PREFACE -- CONTENTS -- CHAPTER 1 ELEMENTS OF THE BAND THEORY OF SEMICONDUCTORS -- 1.1. The Problem of the Electronic States in Solids -- 1.2. The Tight-Binding Approximation -- 1.3. The Nearly Free Electron Approximation -- 1.4. Effective Mass and-the Density of States -- 1.5.Impurity Levels. Statistics -- Chapter 2 BAND STRUCTURE OF GAPLESS SEMICONDUCTORS -- 2.1. The Detection of the Gapless State -- 2.2. Gray Tin -- 2.3. Mercury Chalcogenides HgTe and HgSe -- CHAPTER 3 IMPURITIES IN GAPLESS SEMICONDUCTORS -- 3.1. The Problem of Residual Electron Concentration -- 3.2. Impurities and Native Defects in Mercury Chalcogenides -- 3.3. Energy of Impurity States -- 3.4. Metal-Insulator Transitions -- 3.5. Mott Transition in n-Type Crystals -- 3.6. The Effect of Compensation on the Mott Transition -- 3.7. An "Anomaly" in the Temperature Dependence of Electron Concentration -- 3.8. Freeze-Out of Electrons into Acceptors under the Effect of a Magnetic Field and Pressure -- 3.9. Low-Temperature Peculiarities of Conductivity -- 3.10. Gapless Semiconductors Containing Magnetic Ions -- CONCLUSION -- Practical Applications of Gapless Semiconductors -- Some Results and Prospects -- REFERENCES -- Backmatter |
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Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112643143 |
DOI: | 10.1515/9783112643143 |
Access: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | I. M. Tsidilkovski. |