MOCVD growth of GaN-based high electron mobility transistor structures / / Jr-Tai Chen.
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| Superior document: | Linkoping Studies in Science and Technology Dissertations, Number 1662 |
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| Place / Publishing House: | Linkoping, Sweden : : Linkoping University,, 2015. 2015 |
| Year of Publication: | 2015 |
| Language: | English |
| Series: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Online Access: | |
| Physical Description: | 1 online resource (81 pages) :; illustrations (some color). |
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