MOCVD growth of GaN-based high electron mobility transistor structures / / Jr-Tai Chen.
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Superior document: | Linkoping Studies in Science and Technology Dissertations, Number 1662 |
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VerfasserIn: | |
TeilnehmendeR: | |
Place / Publishing House: | Linkoping, Sweden : : Linkoping University,, 2015. 2015 |
Year of Publication: | 2015 |
Language: | English |
Series: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
Online Access: | |
Physical Description: | 1 online resource (81 pages) :; illustrations (some color). |
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Bibliography: | Includes bibliographical references. |
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ISBN: | 9789175190730 |
ISSN: | 0345-7524 ; |
Hierarchical level: | Monograph |
Statement of Responsibility: | Jr-Tai Chen. |