MOCVD growth of GaN-based high electron mobility transistor structures /

MOCVD growth of GaN-based high electron mobility transistor structures / / Jr-Tai Chen.

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Superior document:Linkoping Studies in Science and Technology Dissertations, Number 1662
VerfasserIn:
Chen, Jr-Tai,
TeilnehmendeR:
Semiconductor Materials Division. Department of Physics, Chemistry, and Biology.
Place / Publishing House:Linkoping, Sweden : : Linkoping University,, 2015.
2015
Year of Publication:2015
Language:English
Series:Linkoping studies in science and technology. Dissertations ; Number 1662.
Online Access:
Physical Description:1 online resource (81 pages) :; illustrations (some color).
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ctrlnum (MiAaPQ)5003328196
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(CaPaEBR)ebr11049571
(OCoLC)909902902
collection bib_alma
record_format marc
spelling Chen, Jr-Tai, author.
MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.
Linkoping, Sweden : Linkoping University, 2015.
2015
1 online resource (81 pages) : illustrations (some color).
text rdacontent
computer rdamedia
online resource rdacarrier
Linkoping Studies in Science and Technology Dissertations, 0345-7524 ; Number 1662
Includes bibliographical references.
Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015).
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Semiconductors Materials.
Epitaxy.
Electronic books.
Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Linkoping University, issuing body.
ProQuest (Firm)
Linkoping studies in science and technology. Dissertations ; Number 1662.
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3328196 Click to View
language English
format eBook
author Chen, Jr-Tai,
spellingShingle Chen, Jr-Tai,
MOCVD growth of GaN-based high electron mobility transistor structures /
Linkoping Studies in Science and Technology Dissertations,
author_facet Chen, Jr-Tai,
Semiconductor Materials Division. Department of Physics, Chemistry, and Biology.
author_variant j t c jtc
author_role VerfasserIn
author2 Semiconductor Materials Division. Department of Physics, Chemistry, and Biology.
author2_role TeilnehmendeR
author_sort Chen, Jr-Tai,
title MOCVD growth of GaN-based high electron mobility transistor structures /
title_full MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.
title_fullStr MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.
title_full_unstemmed MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.
title_auth MOCVD growth of GaN-based high electron mobility transistor structures /
title_new MOCVD growth of GaN-based high electron mobility transistor structures /
title_sort mocvd growth of gan-based high electron mobility transistor structures /
series Linkoping Studies in Science and Technology Dissertations,
series2 Linkoping Studies in Science and Technology Dissertations,
publisher Linkoping University,
publishDate 2015
physical 1 online resource (81 pages) : illustrations (some color).
isbn 9789175190730
issn 0345-7524 ;
callnumber-first T - Technology
callnumber-subject TK - Electrical and Nuclear Engineering
callnumber-label TK7871
callnumber-sort TK 47871.85 C446 42015
genre Electronic books.
genre_facet Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3328196
illustrated Illustrated
dewey-hundreds 600 - Technology
dewey-tens 620 - Engineering
dewey-ones 621 - Applied physics
dewey-full 621.38152
dewey-sort 3621.38152
dewey-raw 621.38152
dewey-search 621.38152
oclc_num 909902902
work_keys_str_mv AT chenjrtai mocvdgrowthofganbasedhighelectronmobilitytransistorstructures
AT semiconductormaterialsdivisiondepartmentofphysicschemistryandbiologylinkopinguniversity mocvdgrowthofganbasedhighelectronmobilitytransistorstructures
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hierarchy_parent_title Linkoping Studies in Science and Technology Dissertations, Number 1662
hierarchy_sequence Number 1662.
is_hierarchy_title MOCVD growth of GaN-based high electron mobility transistor structures /
container_title Linkoping Studies in Science and Technology Dissertations, Number 1662
author2_original_writing_str_mv noLinkedField
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