MOCVD growth of GaN-based high electron mobility transistor structures / / Jr-Tai Chen.
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Superior document: | Linkoping Studies in Science and Technology Dissertations, Number 1662 |
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TeilnehmendeR: | |
Place / Publishing House: | Linkoping, Sweden : : Linkoping University,, 2015. 2015 |
Year of Publication: | 2015 |
Language: | English |
Series: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
Online Access: | |
Physical Description: | 1 online resource (81 pages) :; illustrations (some color). |
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(MiAaPQ)5003328196 (Au-PeEL)EBL3328196 (CaPaEBR)ebr11049571 (OCoLC)909902902 |
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Chen, Jr-Tai, author. MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. Linkoping, Sweden : Linkoping University, 2015. 2015 1 online resource (81 pages) : illustrations (some color). text rdacontent computer rdamedia online resource rdacarrier Linkoping Studies in Science and Technology Dissertations, 0345-7524 ; Number 1662 Includes bibliographical references. Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015). Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. Semiconductors Materials. Epitaxy. Electronic books. Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Linkoping University, issuing body. ProQuest (Firm) Linkoping studies in science and technology. Dissertations ; Number 1662. https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3328196 Click to View |
language |
English |
format |
eBook |
author |
Chen, Jr-Tai, |
spellingShingle |
Chen, Jr-Tai, MOCVD growth of GaN-based high electron mobility transistor structures / Linkoping Studies in Science and Technology Dissertations, |
author_facet |
Chen, Jr-Tai, Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. |
author_variant |
j t c jtc |
author_role |
VerfasserIn |
author2 |
Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. |
author2_role |
TeilnehmendeR |
author_sort |
Chen, Jr-Tai, |
title |
MOCVD growth of GaN-based high electron mobility transistor structures / |
title_full |
MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. |
title_fullStr |
MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. |
title_full_unstemmed |
MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. |
title_auth |
MOCVD growth of GaN-based high electron mobility transistor structures / |
title_new |
MOCVD growth of GaN-based high electron mobility transistor structures / |
title_sort |
mocvd growth of gan-based high electron mobility transistor structures / |
series |
Linkoping Studies in Science and Technology Dissertations, |
series2 |
Linkoping Studies in Science and Technology Dissertations, |
publisher |
Linkoping University, |
publishDate |
2015 |
physical |
1 online resource (81 pages) : illustrations (some color). |
isbn |
9789175190730 |
issn |
0345-7524 ; |
callnumber-first |
T - Technology |
callnumber-subject |
TK - Electrical and Nuclear Engineering |
callnumber-label |
TK7871 |
callnumber-sort |
TK 47871.85 C446 42015 |
genre |
Electronic books. |
genre_facet |
Electronic books. |
url |
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3328196 |
illustrated |
Illustrated |
dewey-hundreds |
600 - Technology |
dewey-tens |
620 - Engineering |
dewey-ones |
621 - Applied physics |
dewey-full |
621.38152 |
dewey-sort |
3621.38152 |
dewey-raw |
621.38152 |
dewey-search |
621.38152 |
oclc_num |
909902902 |
work_keys_str_mv |
AT chenjrtai mocvdgrowthofganbasedhighelectronmobilitytransistorstructures AT semiconductormaterialsdivisiondepartmentofphysicschemistryandbiologylinkopinguniversity mocvdgrowthofganbasedhighelectronmobilitytransistorstructures |
status_str |
n |
ids_txt_mv |
(MiAaPQ)5003328196 (Au-PeEL)EBL3328196 (CaPaEBR)ebr11049571 (OCoLC)909902902 |
hierarchy_parent_title |
Linkoping Studies in Science and Technology Dissertations, Number 1662 |
hierarchy_sequence |
Number 1662. |
is_hierarchy_title |
MOCVD growth of GaN-based high electron mobility transistor structures / |
container_title |
Linkoping Studies in Science and Technology Dissertations, Number 1662 |
author2_original_writing_str_mv |
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