Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
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| Superior document: | Linköping Studies in Science and Technology. Dissertations Series ; v.2239 |
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| Place / Publishing House: | Linköping : : Linkopings Universitet,, 2022. {copy}2022. |
| Year of Publication: | 2022 |
| Edition: | 1st ed. |
| Language: | English |
| Series: | Linköping Studies in Science and Technology. Dissertations Series
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| Online Access: | |
| Physical Description: | 1 online resource (82 pages) |
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Table of Contents:
- Intro
- ABSTRACT
- POPULÄRVETENSKAPLIG SAMMANFATTNING
- PREFACE
- ACKNOWLEDGEMENT
- Contents
- Part I
- 1.1 Introduction
- 1.2 Fundamental properties of group-III nitrides
- 1.3 MOCVD
- 1.4 Epitaxy of N-polar III-Nitrides
- 1.5 Characterization techniques
- 1.6 Summary of main results
- Part II
- 2.1 Publications included in the thesis
- 2.2 Publications not included in the thesis.