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1
Hot-Wall MOCVD of N-polar Group-III Nitride Materials.
Participants: Zhang, Hengfang. [ ]
Published: 2021.
Superior document: Linköping Studies in Science and Technology. Licentiate Thesis Series ; v.1865
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2
Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
Participants: Zhang, Hengfang. [ ]
Published: 2022.
Superior document: Linköping Studies in Science and Technology. Dissertations Series ; v.2239
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