Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.

Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.

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Superior document:Linköping Studies in Science and Technology. Dissertations Series ; v.2239
:
Zhang, Hengfang.
Place / Publishing House:Linköping : : Linkopings Universitet,, 2022.
{copy}2022.
Year of Publication:2022
Edition:1st ed.
Language:English
Series:Linköping Studies in Science and Technology. Dissertations Series
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Physical Description:1 online resource (82 pages)
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id 5007075905
ctrlnum (MiAaPQ)5007075905
(Au-PeEL)EBL7075905
(OCoLC)1343247959
collection bib_alma
record_format marc
spelling Zhang, Hengfang.
Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
1st ed.
Linköping : Linkopings Universitet, 2022.
{copy}2022.
1 online resource (82 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Linköping Studies in Science and Technology. Dissertations Series ; v.2239
Intro -- ABSTRACT -- POPULÄRVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Fundamental properties of group-III nitrides -- 1.3 MOCVD -- 1.4 Epitaxy of N-polar III-Nitrides -- 1.5 Characterization techniques -- 1.6 Summary of main results -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis.
Description based on publisher supplied metadata and other sources.
Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
Electronic books.
Print version: Zhang, Hengfang Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures Linköping : Linkopings Universitet,c2022 9789179293901
ProQuest (Firm)
Linköping Studies in Science and Technology. Dissertations Series
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=7075905 Click to View
language English
format eBook
author Zhang, Hengfang.
spellingShingle Zhang, Hengfang.
Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
Linköping Studies in Science and Technology. Dissertations Series ;
Intro -- ABSTRACT -- POPULÄRVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Fundamental properties of group-III nitrides -- 1.3 MOCVD -- 1.4 Epitaxy of N-polar III-Nitrides -- 1.5 Characterization techniques -- 1.6 Summary of main results -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis.
author_facet Zhang, Hengfang.
author_variant h z hz
author_sort Zhang, Hengfang.
title Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_full Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_fullStr Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_full_unstemmed Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_auth Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_new Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
title_sort hot-wall mocvd of n-polar group-iii nitride materials and high electron mobility transistor structures.
series Linköping Studies in Science and Technology. Dissertations Series ;
series2 Linköping Studies in Science and Technology. Dissertations Series ;
publisher Linkopings Universitet,
publishDate 2022
physical 1 online resource (82 pages)
edition 1st ed.
contents Intro -- ABSTRACT -- POPULÄRVETENSKAPLIG SAMMANFATTNING -- PREFACE -- ACKNOWLEDGEMENT -- Contents -- Part I -- 1.1 Introduction -- 1.2 Fundamental properties of group-III nitrides -- 1.3 MOCVD -- 1.4 Epitaxy of N-polar III-Nitrides -- 1.5 Characterization techniques -- 1.6 Summary of main results -- Part II -- 2.1 Publications included in the thesis -- 2.2 Publications not included in the thesis.
isbn 9789179293901
genre Electronic books.
genre_facet Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=7075905
illustrated Not Illustrated
oclc_num 1343247959
work_keys_str_mv AT zhanghengfang hotwallmocvdofnpolargroupiiinitridematerialsandhighelectronmobilitytransistorstructures
status_str n
ids_txt_mv (MiAaPQ)5007075905
(Au-PeEL)EBL7075905
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carrierType_str_mv cr
hierarchy_parent_title Linköping Studies in Science and Technology. Dissertations Series ; v.2239
is_hierarchy_title Hot-Wall MOCVD of N-polar Group-III Nitride Materials and High Electron Mobility Transistor Structures.
container_title Linköping Studies in Science and Technology. Dissertations Series ; v.2239
marc_error Info : MARC8 translation shorter than ISO-8859-1, choosing MARC8. --- [ 856 : z ]
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