Silicon-germanium heterojunction bipolar transistors for mm-wave systems : : technology, modeling and circuit applications / / editors, Niccolo Rinaldi, Michael Schroter.

• Superior document: River Publishers series in electronic materials and devices
• TeilnehmendeR: Rinaldi, Niccolo,; Schroter, Michael,
• Place / Publishing House: Gistrup, Denmark ;, Delft, Netherlands : : River Publishers,, 2018.; ©2018
• Year of Publication: 2018
• Edition: 1st ed.
• Language: English
• Series: River Publishers series in electronic materials and devices.
• Physical Description: 1 online resource (378 pages).

The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer e...

Table of Contents

• Front Cover
• Half Title page
• RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES
• Title Page - Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications
• Copyright page
• Contents
• Preface
• Acknowledgements
• List of Contributors
• List of Figures
• List of Tables
• List of Abbreviations
• Introduction
• Motivation and Objectives of the DOTSEVEN Project
• Approach toward Achieving the Ambitious Goals
• Overview of Results and Their Impact
• References
• Chapter 1 - SiGe HBT Technology
• 1.1 Introduction
• 1.2 HBT Performance Factors
• 1.3 HBT Device and Process Architectures Explored in the DOTSEVEN Project
• 1.3.1 Selective Epitaxial Growth of the Base
• 1.3.1.1 DPSA-SEG device architecture
• 1.3.1.2 Approaches to overcome limitations of the DPSA-SEG architecture
• 1.3.2 Non-selective Epitaxial Growth of the Base
• 1.4 Optimization of the Vertical Doping Profile
• 1.5 Optimization towards 700 GHz fMAX
• 1.6 Summary
• References
• Chapter 2 - Device Simulation
• 2.1 Numerical Simulation
• 2.2 Device Simulation
• 2.2.1 TCAD Device Optimization
• 2.2.2 Deterministic BTE Solvers
• 2.2.3 Drift-diffusion and Hydrodynamic Transport Models
• 2.2.4 Simulation Examples
• 2.2.4.1 DD simulation
• 2.2.4.2 HD simulation
• 2.2.4.3 Effects beyond DD and HD transport
• 2.2.4.4 Comparison with experimental data
• 2.3 Advanced Electro-thermal Simulation
• 2.3.1 Carrier-Phonon System in SiGe HBTs
• 2.3.2 Deterministic and Self-consistent Electrothermal Simulation Approach
• 2.3.3 Hot Phonon Effects in a Calibrated System
• 2.3.4 Thermal Resistance Extraction from the Simulated DC Characteristics
• 2.4 Microscopic Simulation of Hot-carrier Degradation
• 2.4.1 Physics of Hot-carrier Degradation
• 2.4.2 Modeling of Hot-carrier Effects.
• 2.4.3 Simulation of SiGe HBTs under Stress Conditions Close to the SOA Limit
• References
• Chapter 3 - SiGe HBT Compact Modeling
• 3.1 Introduction
• 3.2 Overview of HICUM Level 2
• 3.3 Modeling of the Quasi-Static Transfer Current
• 3.3.1 Basics of the GICCR
• 3.3.2 SiGe HBT Extensions
• 3.3.3 Temperature Dependence
• 3.4 Charge Storage
• 3.4.1 Critical Current
• 3.4.2 SiGe Heterojunction Barrier
• 3.5 Intra-Device Substrate Coupling
• 3.6 SiGe HBT Parameter Extraction
• 3.6.1 Extraction of Series Resistances
• 3.6.2 Extraction of the Transfer Current Parameters
• 3.6.3 Physics-Based Parameter Scaling
• 3.6.3.1 Standard geometry scaling equation
• 3.6.3.2 Generalized scaling equations
• 3.7 Compact Model Application to Experimental Data
• References
• Chapter 4 - (Sub)mm-wave Calibration
• 4.1 Introduction
• 4.2 Multi-mode Propagation and Calibration Transfer at mm-wave
• 4.2.1 Parallel Plate Waveguide Mode
• 4.2.2 Surface Wave Modes: TM0 and TE1
• 4.2.3 Electrically Thin Substrates
• 4.2.4 Calibration Transfer
• 4.3 Direct On-wafer Calibration
• 4.3.1 Characteristic Impedance Extraction of Transmission Lines
• 4.4 Direct DUT-plane Calibration
• 4.5 Conclusion
• References
• Chapter 5 - Reliability
• 5.1 Mixed-mode Stress Tests
• 5.1.1 Introduction to Hot-Carrier Degradation under MM Stress
• 5.1.2 Long-term MM Stress Characterization on IHP Devices
• 5.1.3 Medium-term MM Stress Characterization on IFX Devices
• 5.2 Long-term Stress Tests
• 5.2.1 Experimental Setup
• 5.2.2 Long-term Degradation Test Results
• 5.2.3 Low-frequency Noise Characterization
• 5.3 Compact Modeling of Hot-Carrier Degradation
• 5.3.1 Empirical Equations by IHP
• 5.3.2 HICUM-based Model
• 5.4 Thermal Effects
• 5.4.1 Experimental RTH Extraction
• 5.4.2 Thermal Simulation
• 5.4.3 Scaling Considerations
• References.
• Chapter 6 - Millimeter-wave Circuits and Applications
• 6.1 Millimeter-wave Benchmark Circuits and Building Blocks
• 6.1.1 Benchmark Circuits
• 6.1.2 Circuit Building Blocks
• 6.1.2.1 W-band low-noise amplifier (LNA) with 0.5 V supply voltage
• 6.1.2.2 W-band low-power frequency tripler
• 6.2 Millimeter-wave and Terahertz Systems
• 6.2.1 240 GHz SiGe Chipset
• 6.2.1.1 Wideband LO signal generation
• 6.2.1.2 Transmitter building blocks
• 6.2.1.3 Receiver building blocks
• 6.2.1.4 Antenna design
• 6.2.1.5 Packaging and high-speed PCB design
• 6.2.1.6 Tx and Rx characterization
• 6.2.1.7 Ultra-high data rate wireless communication
• 6.2.2 210-270 GHz Circularly Polarized Radar
• 6.2.3 0.5 THz Computed Tomography
• 6.2.3.1 Components
• 6.2.3.2 Detector design
• 6.2.3.3 THz-CT results
• References
• Chapter 7 - Future of SiGe HBT Technology and Its Applications
• 7.1 Introduction
• 7.2 Technology Comparison
• 7.3 Future Millimeter-wave and THz Applications
• 7.3.1 Communication
• 7.3.2 Radar
• 7.3.3 Imaging and Sensing
• References
• Index
• About the Editors
• Back Cover.