Strain-engineered MOSFETs / / C. K. Maiti, T. K. Maiti.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...
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| Place / Publishing House: | Boca Raton : : CRC Press, Taylor & Francis,, [2013] ©2013 |
| Year of Publication: | 2013 |
| Edition: | 1st edition |
| Language: | English |
| Physical Description: | 1 online resource (311 p.) |
| Notes: | Description based upon print version of record. |
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Table of Contents:
- Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
- Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover