Strain-engineered MOSFETs / / C. K. Maiti, T. K. Maiti.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...
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| Place / Publishing House: | Boca Raton : : CRC Press, Taylor & Francis,, [2013] ©2013 |
| Year of Publication: | 2013 |
| Edition: | 1st edition |
| Language: | English |
| Physical Description: | 1 online resource (311 p.) |
| Notes: | Description based upon print version of record. |
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| Other title: | Strain-engineered metal-oxide-semiconductor field-effect transistors |
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| Summary: | Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book fo |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 1315216574 1466503475 |
| Hierarchical level: | Monograph |
| Statement of Responsibility: | C. K. Maiti, T. K. Maiti. |