Strain-engineered MOSFETs /

Open Access

Strain-engineered MOSFETs / / C. K. Maiti, T. K. Maiti.

Show other versions (1)

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...

Full description

Saved in:
Bibliographic Details
VerfasserIn:
Maiti, C. K.,
Maiti, T. K.,
TeilnehmendeR:
Maiti, T. K.,
Place / Publishing House:Boca Raton : : CRC Press, Taylor & Francis,, [2013]
©2013
Year of Publication:2013
Edition:1st edition
Language:English
Physical Description:1 online resource (311 p.)
Notes:Description based upon print version of record.
Tags: Add Tag
No Tags, Be the first to tag this record!
id 993554978104498
ctrlnum (CKB)2670000000316832
(EBL)1107603
(OCoLC)823719605
(SSID)ssj0000803732
(PQKBManifestationID)11488888
(PQKBTitleCode)TC0000803732
(PQKBWorkID)10811509
(PQKB)11684281
(MiAaPQ)EBC1107603
(MiAaPQ)EBC7245242
(Au-PeEL)EBL7245242
(CaSebORM)9781466503472
(OCoLC)862121374
(OCoLC)ocn862121374
(EXLCZ)992670000000316832
collection bib_alma
record_format marc
spelling Maiti, C. K., author.
Strain-engineered MOSFETs / C. K. Maiti, T. K. Maiti.
Strain-engineered metal-oxide-semiconductor field-effect transistors
1st edition
Boca Raton : CRC Press, Taylor & Francis, [2013]
©2013
1 online resource (311 p.)
text txt
computer c
online resource cr
text file
Description based upon print version of record.
Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book fo
English
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International CC BY-NC-ND 4.0 https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode
Unrestricted online access star
Includes bibliographical references and index.
Description based on online resource; title from PDF title page (EBook Central, viewed February 2, 2024).
Integrated circuits Fault tolerance.
Metal oxide semiconductor field-effect transistors Reliability.
Strains and stresses.
1-4665-0055-7
Maiti, T. K., author.
language English
format eBook
author Maiti, C. K.,
Maiti, T. K.,
spellingShingle Maiti, C. K.,
Maiti, T. K.,
Strain-engineered MOSFETs /
Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover
author_facet Maiti, C. K.,
Maiti, T. K.,
Maiti, T. K.,
author_variant c k m ck ckm
t k m tk tkm
author_role VerfasserIn
VerfasserIn
author2 Maiti, T. K.,
author2_role TeilnehmendeR
author_sort Maiti, C. K.,
title Strain-engineered MOSFETs /
title_full Strain-engineered MOSFETs / C. K. Maiti, T. K. Maiti.
title_fullStr Strain-engineered MOSFETs / C. K. Maiti, T. K. Maiti.
title_full_unstemmed Strain-engineered MOSFETs / C. K. Maiti, T. K. Maiti.
title_auth Strain-engineered MOSFETs /
title_alt Strain-engineered metal-oxide-semiconductor field-effect transistors
title_new Strain-engineered MOSFETs /
title_sort strain-engineered mosfets /
publisher CRC Press, Taylor & Francis,
publishDate 2013
physical 1 online resource (311 p.)
edition 1st edition
contents Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover
isbn 1-315-21657-4
1-4665-0347-5
1-4665-0055-7
callnumber-first T - Technology
callnumber-subject TK - Electrical and Nuclear Engineering
callnumber-label TK7871
callnumber-sort TK 47871.99 M44 M248 42013
illustrated Illustrated
dewey-hundreds 600 - Technology
dewey-tens 620 - Engineering
dewey-ones 621 - Applied physics
dewey-full 621.3815/284
621.3815284
dewey-sort 3621.3815 3284
dewey-raw 621.3815/284
621.3815284
dewey-search 621.3815/284
621.3815284
oclc_num 823719605
862121374
work_keys_str_mv AT maitick strainengineeredmosfets
AT maititk strainengineeredmosfets
AT maitick strainengineeredmetaloxidesemiconductorfieldeffecttransistors
AT maititk strainengineeredmetaloxidesemiconductorfieldeffecttransistors
status_str n
ids_txt_mv (CKB)2670000000316832
(EBL)1107603
(OCoLC)823719605
(SSID)ssj0000803732
(PQKBManifestationID)11488888
(PQKBTitleCode)TC0000803732
(PQKBWorkID)10811509
(PQKB)11684281
(MiAaPQ)EBC1107603
(MiAaPQ)EBC7245242
(Au-PeEL)EBL7245242
(CaSebORM)9781466503472
(OCoLC)862121374
(OCoLC)ocn862121374
(EXLCZ)992670000000316832
carrierType_str_mv cr
is_hierarchy_title Strain-engineered MOSFETs /
author2_original_writing_str_mv noLinkedField
_version_ 1798373717904982016
fullrecord <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03371nam a22006133i 4500</leader><controlfield tag="001">993554978104498</controlfield><controlfield tag="005">20240424225813.0</controlfield><controlfield tag="006">m o d | </controlfield><controlfield tag="007">cr#-n---------</controlfield><controlfield tag="008">231110s2013 flua ob 001 0 eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1-315-21657-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1-4665-0347-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)2670000000316832</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EBL)1107603</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)823719605</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SSID)ssj0000803732</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PQKBManifestationID)11488888</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PQKBTitleCode)TC0000803732</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PQKBWorkID)10811509</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PQKB)11684281</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(MiAaPQ)EBC1107603</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(MiAaPQ)EBC7245242</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(Au-PeEL)EBL7245242</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CaSebORM)9781466503472</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)862121374</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)ocn862121374</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)992670000000316832</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">MiAaPQ</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="e">pn</subfield><subfield code="c">MiAaPQ</subfield><subfield code="d">MiAaPQ</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7871.99.M44</subfield><subfield code="b">M248 2013</subfield></datafield><datafield tag="082" ind1="0" ind2="0"><subfield code="a">621.3815/284</subfield><subfield code="a">621.3815284</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">TEC008010</subfield><subfield code="a">TEC008070</subfield><subfield code="a">TEC021000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="090" ind1=" " ind2=" "><subfield code="a">TK7871.99.M44</subfield><subfield code="b">M248 2012</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Maiti, C. K.,</subfield><subfield code="e">author.</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Strain-engineered MOSFETs /</subfield><subfield code="c">C. K. Maiti, T. K. Maiti.</subfield></datafield><datafield tag="246" ind1="3" ind2=" "><subfield code="a">Strain-engineered metal-oxide-semiconductor field-effect transistors</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1st edition</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boca Raton :</subfield><subfield code="b">CRC Press, Taylor &amp; Francis,</subfield><subfield code="c">[2013]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">©2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (311 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">text file</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Description based upon print version of record.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book fo</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International</subfield><subfield code="f">CC BY-NC-ND 4.0</subfield><subfield code="u">https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode</subfield></datafield><datafield tag="506" ind1="0" ind2=" "><subfield code="f">Unrestricted online access</subfield><subfield code="2">star</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="588" ind1=" " ind2=" "><subfield code="a">Description based on online resource; title from PDF title page (EBook Central, viewed February 2, 2024).</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Integrated circuits</subfield><subfield code="x">Fault tolerance.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="x">Reliability.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Strains and stresses.</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">1-4665-0055-7</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maiti, T. K.,</subfield><subfield code="e">author.</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2024-05-07 06:09:41 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2013-02-03 06:49:41 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="i">DOAB Directory of Open Access Books</subfield><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&amp;portfolio_pid=5337420050004498&amp;Force_direct=true</subfield><subfield code="Z">5337420050004498</subfield><subfield code="b">Available</subfield><subfield code="8">5337420050004498</subfield></datafield></record></collection>

Similar Items