Ion Implantation / / edited by Mark Goorsky.
Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new material...
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Place / Publishing House: | London, England : : IntechOpen,, 2012. |
Year of Publication: | 2012 |
Language: | English |
Physical Description: | 1 online resource (448 pages) :; illustrations |
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245 | 0 | 0 | |a Ion Implantation / |c edited by Mark Goorsky. |
260 | |b IntechOpen |c 2012 | ||
264 | 1 | |a London, England : |b IntechOpen, |c 2012. | |
300 | |a 1 online resource (448 pages) : |b illustrations | ||
336 | |a text |b txt |2 rdacontent | ||
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338 | |a online resource |b cr |2 rdacarrier | ||
588 | |a Description based on publisher supplied metadata and other sources. | ||
504 | |a Includes bibliographical references. | ||
520 | |a Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book. | ||
546 | |a English | ||
650 | 0 | |a Ion implantation. | |
653 | |a Physical Sciences | ||
653 | |a Engineering and Technology | ||
653 | |a Materials Science | ||
653 | |a Semiconductor | ||
653 | |a Thermal Engineering | ||
776 | |z 953-51-0634-1 | ||
700 | 1 | |a Goorsky, Mark, |e editor. | |
906 | |a BOOK | ||
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