Ion Implantation / / edited by Mark Goorsky.

Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new material...

Full description

Saved in:
Bibliographic Details
:
TeilnehmendeR:
Place / Publishing House:London, England : : IntechOpen,, 2012.
Year of Publication:2012
Language:English
Physical Description:1 online resource (448 pages) :; illustrations
Tags: Add Tag
No Tags, Be the first to tag this record!
LEADER 00934nam a2200289 i 4500
001 993545446304498
005 20221018142842.0
006 m o d
007 cr |||||||||||
008 221018s2012 enka ob 000 0 eng d
020 |a 953-51-4292-5 
035 |a (CKB)4970000000098195 
035 |a (NjHacI)994970000000098195 
035 |a (oapen)https://directory.doabooks.org/handle/20.500.12854/50660 
035 |a (EXLCZ)994970000000098195 
040 |a NjHacI  |b eng  |e rda  |c NjHacl 
041 0 |a eng 
050 4 |a QC702.7.I55  |b .I565 2012 
082 0 4 |a 530.41  |2 23 
100 1 |a Mark Goorsky  |4 auth 
245 0 0 |a Ion Implantation /  |c edited by Mark Goorsky. 
260 |b IntechOpen  |c 2012 
264 1 |a London, England :  |b IntechOpen,  |c 2012. 
300 |a 1 online resource (448 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
588 |a Description based on publisher supplied metadata and other sources. 
504 |a Includes bibliographical references. 
520 |a Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book. 
546 |a English 
650 0 |a Ion implantation. 
653 |a Physical Sciences 
653 |a Engineering and Technology 
653 |a Materials Science 
653 |a Semiconductor 
653 |a Thermal Engineering 
776 |z 953-51-0634-1 
700 1 |a Goorsky, Mark,  |e editor. 
906 |a BOOK 
ADM |b 2023-02-22 03:58:03 Europe/Vienna  |f system  |c marc21  |a 2019-04-13 22:04:18 Europe/Vienna  |g false 
AVE |i DOAB Directory of Open Access Books  |P DOAB Directory of Open Access Books  |x https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&portfolio_pid=5351652040004498&Force_direct=true  |Z 5351652040004498  |b Available  |8 5351652040004498