Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth / eingereicht von Wolfgang Braun
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| Place / Publishing House: | Stuttgart, 1996 |
| Year of Publication: | 1996 |
| Language: | English |
| Subjects: | |
| Physical Description: | 192 S.; Ill., graph. Darst. |
| Notes: | Zsfassung in dt. Sprache |
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Braun, Wolfgang aut Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth eingereicht von Wolfgang Braun Stuttgart 1996 192 S. Ill., graph. Darst. Zsfassung in dt. Sprache Berlin, Humboldt-Univ., Diss., 1996 Galliumarsenid s (DE-588)4019155-2 Aluminiumarsenid s (DE-588)4324566-3 Molekularstrahlepitaxie s (DE-588)4170399-6 Halbleitergrenzfläche s (DE-588)4158802-2 RHEED s (DE-588)4295703-5 AT-OBV UBGRAI YWOAW MAG1-3 26434-B 2217832460004498 |
| language |
English |
| format |
Thesis Book |
| author |
Braun, Wolfgang |
| spellingShingle |
Braun, Wolfgang Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth Galliumarsenid (DE-588)4019155-2 Aluminiumarsenid (DE-588)4324566-3 Molekularstrahlepitaxie (DE-588)4170399-6 Halbleitergrenzfläche (DE-588)4158802-2 RHEED (DE-588)4295703-5 |
| author_facet |
Braun, Wolfgang |
| author_variant |
w b wb |
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VerfasserIn |
| author_sort |
Braun, Wolfgang |
| title |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_full |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth eingereicht von Wolfgang Braun |
| title_fullStr |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth eingereicht von Wolfgang Braun |
| title_full_unstemmed |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth eingereicht von Wolfgang Braun |
| title_auth |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_new |
Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_sort |
reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| publishDate |
1996 |
| physical |
192 S. Ill., graph. Darst. |
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26434-B |
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26434-B |
| topic |
Galliumarsenid (DE-588)4019155-2 Aluminiumarsenid (DE-588)4324566-3 Molekularstrahlepitaxie (DE-588)4170399-6 Halbleitergrenzfläche (DE-588)4158802-2 RHEED (DE-588)4295703-5 |
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Galliumarsenid Aluminiumarsenid Molekularstrahlepitaxie Halbleitergrenzfläche RHEED |
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Illustrated |
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AT braunwolfgang reflectionhighenergyelectrondiffractionstudiesofsemiconductorinterfacesduringmolecularbeamepitaxygrowth |
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Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
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