Transient numerical simulation of sublimation growth of SiC bulk single crystals : modeling, finite volume method, results / Peter Philip
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| Superior document: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 |
|---|---|
| VerfasserIn: | |
| Place / Publishing House: | Berlin : WIAS, 2003 |
| Year of Publication: | 2003 |
| Language: | English |
| Series: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V.
22 |
| Subjects: | |
| Physical Description: | XV, 289 S.; Ill., graph. Darst.; 30 cm |
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Philip, Peter aut Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results Peter Philip Berlin WIAS 2003 XV, 289 S. Ill., graph. Darst. 30 cm Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 Zugl.: Berlin, Univ., Diss., 2003 Einkristall s (DE-588)4013901-3 Kristallwachstum s (DE-588)4123579-4 Siliciumcarbid s (DE-588)4055009-6 Simulation s (DE-588)4055072-2 Numerisches Verfahren s (DE-588)4128130-5 AT-OBV UBGSDL TUWMMM (AT-OBV)AC03029299 22 YWOAW MAG1-3 30836-C 2218005240004498 |
| language |
English |
| format |
Thesis Book |
| author |
Philip, Peter |
| spellingShingle |
Philip, Peter Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Einkristall (DE-588)4013901-3 Kristallwachstum (DE-588)4123579-4 Siliciumcarbid (DE-588)4055009-6 Simulation (DE-588)4055072-2 Numerisches Verfahren (DE-588)4128130-5 |
| author_facet |
Philip, Peter |
| author_variant |
p p pp |
| author_role |
VerfasserIn |
| author_sort |
Philip, Peter |
| title |
Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results |
| title_sub |
modeling, finite volume method, results |
| title_full |
Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results Peter Philip |
| title_fullStr |
Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results Peter Philip |
| title_full_unstemmed |
Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results Peter Philip |
| title_auth |
Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results |
| title_new |
Transient numerical simulation of sublimation growth of SiC bulk single crystals |
| title_sort |
transient numerical simulation of sublimation growth of sic bulk single crystals modeling, finite volume method, results |
| series |
Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
| series2 |
Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
| publisher |
WIAS |
| publishDate |
2003 |
| physical |
XV, 289 S. Ill., graph. Darst. 30 cm |
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30836-C |
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30836-C |
| topic |
Einkristall (DE-588)4013901-3 Kristallwachstum (DE-588)4123579-4 Siliciumcarbid (DE-588)4055009-6 Simulation (DE-588)4055072-2 Numerisches Verfahren (DE-588)4128130-5 |
| topic_facet |
Einkristall Kristallwachstum Siliciumcarbid Simulation Numerisches Verfahren |
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Illustrated |
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AT philippeter transientnumericalsimulationofsublimationgrowthofsicbulksinglecrystalsmodelingfinitevolumemethodresults |
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Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 |
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Transient numerical simulation of sublimation growth of SiC bulk single crystals modeling, finite volume method, results |
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Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 |
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