Transient numerical simulation of sublimation growth of SiC bulk single crystals : modeling, finite volume method, results / Peter Philip
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| Superior document: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 |
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| VerfasserIn: | |
| Place / Publishing House: | Berlin : WIAS, 2003 |
| Year of Publication: | 2003 |
| Language: | English |
| Series: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V.
22 |
| Subjects: | |
| Physical Description: | XV, 289 S.; Ill., graph. Darst.; 30 cm |
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OeAW BAS:IS (Library, Archiv, Collections)
| Location: | BASIS-Monographies |
| Call Numbers: | 30836-C |
| Call Number | 2nd Call Number | Description | Location | Remarks | Status | Availability | Order |
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| 30836-C | BASIS-Monographies | Loan | Available | Place a Hold |