Transient numerical simulation of sublimation growth of SiC bulk single crystals : modeling, finite volume method, results / Peter Philip
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Superior document: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 22 |
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VerfasserIn: | |
Place / Publishing House: | Berlin : WIAS, 2003 |
Year of Publication: | 2003 |
Language: | English |
Series: | Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V.
22 |
Subjects: | |
Physical Description: | XV, 289 S.; Ill., graph. Darst.; 30 cm |
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245 | 1 | 0 | |a Transient numerical simulation of sublimation growth of SiC bulk single crystals |b modeling, finite volume method, results |c Peter Philip |
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490 | 1 | |a Report / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |v 22 | |
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