Nonlinear Design : : FETs and HEMTs.

Nonlinear Design : : FETs and HEMTs.

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Bibliographic Details
:
Ladbrooke, Peter H.
Place / Publishing House:Norwood : : Artech House,, 2021.
©2021.
Year of Publication:2021
Edition:1st ed.
Language:English
Online Access:
Physical Description:1 online resource (373 pages)
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Table of Contents:
  • Nonlinear Design: FETs and HEMTs
  • Contents
  • Preface
  • Acknowledgments
  • Introduction
  • Part I
  • Chapter 1 Introduction
  • 1.1 The Statement of the Problem
  • 1.2 Verifying the Approach in MMIC Design: GaAs FETs and HEMTs
  • 1.3 Aims of the Present Work
  • 1.3.1 Motivation and Practical Application
  • 1.3.2 The Physics-to-CircuitModel Construct
  • 1.3.3 Applicability
  • 1.4 Preview of Results
  • 1.5 Organization of the Book
  • 1.6 A Note on Figures
  • References
  • Chapter 2 Summary of Approaches and Needs
  • 2.1 Why Models Are Important
  • 2.2 Types of Nonlinear Models
  • 2.3 Desirable Attributes
  • 2.4 Behavioral or Black Box Characterization
  • 2.5 Properties of Large-SignalModels in More Detail
  • 2.5.1 List of Properties
  • 2.5.2 The Subthreshold Region
  • 2.5.3 Consequences of Fitting Well to Some Features of iD (vGS,vDS) butNot Others
  • 2.5.4 Thermal Considerations
  • 2.5.5 Construction of the Model from Measurements
  • 2.5.6 The Position of Commercial Extractors
  • 2.5.7 FET Size Considerations
  • 2.5.8 Model Openness in Construction and Usability
  • 2.5.9 Constraints Placed upon Models by Circuit Simulators
  • 2.6 Rauscher and Willing
  • 2.7 The Curtice Quadratic Model
  • 2.7.1 Expression Used for the Modeling Current
  • 2.7.2 Expression Used for the Modeling Capacitance
  • 2.7.3 Basis
  • 2.7.4 Underlying Soundness
  • 2.7.5 Measurements Required
  • 2.7.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.7.7 Scalability
  • 2.7.8 General Comments
  • 2.8 The Curtice-EttenbergModel
  • 2.8.1 Expressions Used for Modeling Current
  • 2.8.2 Expressions Used for Modeling Capacitance
  • 2.8.3 Basis
  • 2.8.4 Underlying Soundness
  • 2.8.5 Measurements Required
  • 2.8.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.8.7 Scalability
  • 2.9 The Materka-KacprzakModel.
  • 2.9.1 Expressions Used for Modeling Current
  • 2.9.2 Expressions Used for Modeling Capacitance
  • 2.9.3 Basis
  • 2.9.4 Underlying Soundness
  • 2.9.5 Measurements Required
  • 2.9.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.9.7 Scalability
  • 2.10 An Illustrated Application
  • 2.10.1 Current Equation: Modified Materka
  • 2.10.2 Capacitance Equations: Use of the Statz Expressions
  • 2.10.3 Results
  • 2.11 The Statz Model
  • 2.11.1 Expressions Used for Modeling Current
  • 2.11.2 Expressions Used for Modeling Capacitance
  • 2.11.3 Basis
  • 2.11.4 Underlying Soundness
  • 2.11.5 Measurements Required
  • 2.11.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.11.7 Scalability
  • 2.12 TriQuint Own Model (TOM)
  • 2.12.1 Expressions Used for Modeling Current
  • 2.12.2 Expressions Used for Modeling Capacitance
  • 2.12.3 Basis
  • 2.12.4 Underlying Soundness
  • 2.12.5 Measurements Required
  • 2.12.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.12.7 Scalability
  • 2.13 The EEFET3 Model
  • 2.13.1 Basis
  • 2.13.2 Underlying Soundness
  • 2.13.3 Openness of Procedure for Extracting the Model from Measurements
  • 2.14 Other Models Using the Commonplace Equivalent Circuit
  • 2.14.1 Dortu-MullerMethod
  • 2.14.2 Rodrigues-Tellez
  • 2.14.3 Tajima
  • 2.14.4 University of Cantabria Model
  • 2.14.5 University College Dublin Model
  • 2.15 The Parker-SkellernModel
  • 2.15.1 Shortcomings in Previous Practice
  • 2.15.2 Parker's Scheme: Nested Transformations
  • 2.15.3 Expressions Used for Modeling Capacitance
  • 2.15.4 Basis and Underlying Soundness
  • 2.15.5 Measurements Required
  • 2.15.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.15.7 Scalability
  • 2.15.8 General Comments
  • 2.16 The Root Model
  • 2.16.1 Basis
  • 2.16.2 Underlying Soundness
  • 2.16.3 Measurements Required.
  • 2.16.4 Thermal Effects
  • 2.16.5 Openness of Procedure for Extracting the Model from Measurements
  • 2.16.6 General Comments
  • 2.17 The Angelov Model
  • 2.17.1 Expression Used for Modeling Current
  • 2.17.2 Expression Used for Modeling Capacitance
  • 2.17.3 Basis
  • 2.17.4 Underlying Soundness
  • 2.17.5 Measurements Required
  • 2.17.6 Openness of Procedure for Extracting the Model from Measurements
  • 2.17.7 Scalability
  • 2.17.8 General Comments
  • 2.18 Conclusion
  • References
  • Chapter 3 Practical Behavior of FETs
  • 3.1 dc I(V), Dynamic I(V), and RF Properties
  • 3.1.1 Example Differences Between dc I(V) and Dynamic i(v
  • 3.1.2 Breakdown Different at RF from dc
  • 3.1.3 Memory Effects: Surface States, Deep Levels, and Self-Heating
  • 3.1.4 S-Parameters:dc Bias and Pulsed Bias
  • 3.1.5 Device-to-DeviceVariations
  • 3.2 Bias Dependence of the Elements
  • 3.2.1 Common Practice: The Beginning with Rauscher and Willing
  • 3.2.2 Fitting to S-Parameters:Examples
  • 3.2.3 The Commonplace Model
  • 3.2.4 Bias Dependence of the Elements: Examples
  • 3.3 τ: A Vital But Overlooked Physical Variable
  • References
  • Chapter 4 The Standard Model:Deriving the Elements
  • 4.1 Element Functions Obtained by Fitting: True or Askew?
  • 4.2 Neglect of Nonlinear Terms
  • 4.2.1 The Problem of Nonlinear Extraction
  • 4.2.2 Extracted Versus True Nonlinear Element Functions
  • 4.2.3 Consequences for Nonlinear Circuit Simulation
  • 4.3 Difficult Cases: Early SiC FET Example
  • 4.4 Improvements Towards a True Nonlinear Model
  • References
  • Chapter 5 The Capacitance Puzzlein the Standard Model
  • 5.1 The Form of Cgd and Cds: Fact or Artefact?
  • 5.2 The Composition of Cgc
  • 5.3 C from g: Deriving Capacitance from Conductance
  • 5.4 Standard Model Capacitance in Review
  • References
  • Chapter 6 Dynamic I(V) Measurements.
  • 6.1 Development of a Desktop Pulsed I(V) Instrument
  • 6.2 Operation and Utilization
  • 6.3 Memory and Other Effects
  • 6.4 Contrariness as a Positive
  • 6.5 Contemporary Instrumentation
  • References
  • Part II
  • Chapter 7 Reformulating the Circuit Model
  • 7.1 Introduction
  • 7.2 The Core
  • 7.3 Charge Flows When VGS Changes
  • 7.4 Charge Flows When VDG Changes
  • 7.5 Resistive and Ancillary Elements
  • 7.6 Voltage Dependence of the Elements
  • 7.7 Reduction in the Static State to the Standard Model
  • 7.8 Previously Published Versions
  • References
  • Chapter 8 The Importance and Utility of τ
  • 8.1 Nature and Origin
  • 8.2 Pivotal Role in the Reformed Model
  • 8.3 Inclusion in Circuit Simulators
  • 8.4 X(τ) as a Staple of Device Operation
  • 8.5 A Repository of Information on Device Technology
  • References
  • Chapter 9 Extraction
  • 9.1 Introduction
  • 9.2 Obtaining the Element Functions
  • 9.2.1 Obtaining the Standard Model Element Functions: The Fitter
  • 9.2.2 Fitting the New Topology Model
  • 9.3 Curve Fitting
  • Reference
  • Chapter 10 Obtaining the Currentand Capacitance Functions
  • 10.1 Current Functions from Pulsed I(V) Measurements
  • 10.2 Dynamic I(V) Reconstructor
  • 10.3 Implications for Slow-RateTransients
  • 10.4 Obtaining the Capacitance Functions
  • 10.5 Charge Conservation
  • 10.6 The Defining Case of VDS = 0V
  • 10.7 Practical Example of Reformed Model Elements
  • References
  • Chapter 11 Practical Results
  • 11.1 Introduction
  • 11.2 First Test: Power Compression and Harmonic Generation
  • 11.3 A 38 GHz Frequency Doubler
  • 11.4 Two-Stageand Three-Stage500 mWMMIC
  • 11.5 Harmonic Load Pull
  • 11.6 Memory Effect: Basic Illustration
  • References
  • Chapter 12 Circuit Simulators
  • 12.1 Introduction
  • 12.2 Implementation in a Harmonic Balance Simulator
  • 12.2.1 Particularizing the Model
  • 12.2.2 Accommodating τ.
  • 12.2.3 Run Time and Convergence
  • 12.3 Experience with a Time-DomainSimulator
  • 12.4 Simulation Prospects
  • References
  • Part III
  • Chapter 13 Fundamentals of FET Operation
  • 13.1 Introduction
  • 13.2 Electron Depletion and Transport
  • 13.3 The Space-ChargeLayer Extension X
  • 13.4 The Flat d Approximation
  • 13.5 The Uniform EyX Termination Approximation
  • 13.6 Expressions for VGC and VD′G
  • 13.7 The d-LiftPrinciple
  • 13.8 The Delay τgm
  • References
  • Chapter 14 Current and Charge Conservation
  • 14.1 Channel Current
  • 14.2 Transreactance Current
  • 14.3 Charge Conservation
  • 14.4 Charge Storage by Pure Delay τ
  • 14.5 Resistances RS and RI
  • References
  • Chapter 15 Charge Storage
  • 15.1 Revisiting Capacitance
  • 15.2 When VGS Changes
  • 15.2.1 The Overall Picture
  • 15.2.2 Branch Capacitance
  • 15.2.3 Transcapacitance
  • 15.2.4 Branch Charge Storage by Pure Delay
  • 15.3 When VDS Changes
  • 15.3.1 The Overall Picture
  • 15.3.2 Branch Capacitance
  • 15.3.3 Transcapacitance
  • 15.3.4 Orthogonal Branch Charge Storage by Pure Delay
  • 15.4 One Last Visit
  • 15.4.1 Reconciliation of the Main Capacitances
  • 15.4.2 Wherefore Cds?
  • 15.4.3 The True Nature of the Standard Model
  • 15.5 Enter the Transit Time
  • References
  • Chapter 16 Macro-CellSimulators
  • 16.1 Introduction
  • 16.2 Simulator Requirements
  • 16.3 Macro-CellSolvers
  • 16.3.1 The Macro-CellIdea
  • 16.3.2 Construction
  • 16.3.3 Choosing the Cells
  • 16.3.4 Below-the-KneeRealism
  • 16.3.5 Deconfinement of Hot Electrons
  • 16.4 The PHEMT Macro-CellSolver
  • 16.5 Applications and Limitations
  • References
  • Conclusion
  • Acronyms and Abbreviations
  • List of Symbols
  • About the Author
  • Index.

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