GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /

GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / / vorgelegt von Peng Luo.

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VerfasserIn:
Luo, Peng,
Place / Publishing House:Gottingen : : Cuvillier Verlag,, 2018.
Year of Publication:2018
Language:English
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Physical Description:1 online resource (160 pages)
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record_format marc
spelling Luo, Peng, author.
GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.
Gottingen : Cuvillier Verlag, 2018.
1 online resource (160 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Description based on print version record.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2018. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Field-effect transistors Congresses.
Electronic books.
Print version: Luo, Peng. GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements. Gottingen : Cuvillier Verlag, 2018 160 pages 9783736999060
ProQuest (Firm)
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5632290 Click to View
language English
format eBook
author Luo, Peng,
spellingShingle Luo, Peng,
GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /
author_facet Luo, Peng,
author_variant p l pl
author_role VerfasserIn
author_sort Luo, Peng,
title GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /
title_full GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.
title_fullStr GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.
title_full_unstemmed GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.
title_auth GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /
title_new GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /
title_sort gan hemt modeling including trapping effects based on chalmers model and pulsed s-parameter measurements /
publisher Cuvillier Verlag,
publishDate 2018
physical 1 online resource (160 pages)
isbn 9783736989061 (e-book)
9783736999060
callnumber-first T - Technology
callnumber-subject TK - Electrical and Nuclear Engineering
callnumber-label TK7871
callnumber-sort TK 47871.95 L86 42018
genre Electronic books.
genre_facet Congresses.
Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5632290
illustrated Not Illustrated
dewey-hundreds 600 - Technology
dewey-tens 620 - Engineering
dewey-ones 621 - Applied physics
dewey-full 621.381528
dewey-sort 3621.381528
dewey-raw 621.381528
dewey-search 621.381528
oclc_num 1082978123
work_keys_str_mv AT luopeng ganhemtmodelingincludingtrappingeffectsbasedonchalmersmodelandpulsedsparametermeasurements
status_str n
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carrierType_str_mv cr
is_hierarchy_title GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements /
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