Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang.
Saved in:
VerfasserIn: | |
---|---|
Place / Publishing House: | Gottingen, [Germany] : : Cuvillier Verlag,, 2015. 2015 |
Year of Publication: | 2015 |
Language: | English |
Online Access: | |
Physical Description: | 1 online resource (187 pages) |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
GaN-based materials and devices : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis.
Published: (c2004.) -
GaN transistors for efficient power conversion / / Alex Lidow [and three others].
Published: (2015.) -
MOCVD growth of GaN-based high electron mobility transistor structures / / Jr-Tai Chen.
by: Chen, Jr-Tai,
Published: (2015.) -
Vertical GaN and SiC power devices / / Kazuhiro Mochizuki.
by: Mochizuki, Kazuhiro,
Published: (2018.) -
Device characterization and modeling of large-size GaN HEMTs / Jaime Alberto Zamudio Flores.
by: Flores, Jaime Alberto Zamudio.
Published: (2012.)