Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
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Year of Publication: | 2006 |
Language: | English |
Physical Description: | 1 electronic resource (VI, 132 p. p.) |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01510nam-a2200313z--4500</leader><controlfield tag="001">993562123804498</controlfield><controlfield tag="005">20230221123857.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr|mn|---annan</controlfield><controlfield tag="008">202102s2006 xx |||||o ||| eneng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)4920000000101734</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(oapen)https://directory.doabooks.org/handle/20.500.12854/42490</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)994920000000101734</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Schneider, Karl</subfield><subfield code="4">auth</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="b">KIT Scientific Publishing</subfield><subfield code="c">2006</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 electronic resource (VI, 132 p. p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">bipolar transistor amplifier</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">transistor optimization</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">transistor model</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">distributed amplifier</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">hetojunction bipolar transistor</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-86644-021-9</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2023-03-03 03:50:23 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2019-11-10 04:18:40 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&portfolio_pid=5337896310004498&Force_direct=true</subfield><subfield code="Z">5337896310004498</subfield><subfield code="8">5337896310004498</subfield></datafield></record></collection> |
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Schneider, Karl auth Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors KIT Scientific Publishing 2006 1 electronic resource (VI, 132 p. p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. English bipolar transistor amplifier transistor optimization transistor model distributed amplifier hetojunction bipolar transistor 3-86644-021-9 |
language |
English |
format |
eBook |
author |
Schneider, Karl |
spellingShingle |
Schneider, Karl Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
author_facet |
Schneider, Karl |
author_variant |
k s ks |
author_sort |
Schneider, Karl |
title |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_full |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_fullStr |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_full_unstemmed |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_auth |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_new |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
title_sort |
broadband amplifiers for high data rates using inp/ingaas double heterojunction bipolar transistors |
publisher |
KIT Scientific Publishing |
publishDate |
2006 |
physical |
1 electronic resource (VI, 132 p. p.) |
isbn |
3-86644-021-9 |
illustrated |
Not Illustrated |
work_keys_str_mv |
AT schneiderkarl broadbandamplifiersforhighdataratesusinginpingaasdoubleheterojunctionbipolartransistors |
status_str |
n |
ids_txt_mv |
(CKB)4920000000101734 (oapen)https://directory.doabooks.org/handle/20.500.12854/42490 (EXLCZ)994920000000101734 |
carrierType_str_mv |
cr |
is_hierarchy_title |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
_version_ |
1764993889396064256 |