Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
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| Year of Publication: | 2006 |
| Language: | English |
| Physical Description: | 1 electronic resource (VI, 132 p. p.) |
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| 100 | 1 | |a Schneider, Karl |4 auth | |
| 245 | 1 | 0 | |a Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors |
| 260 | |b KIT Scientific Publishing |c 2006 | ||
| 300 | |a 1 electronic resource (VI, 132 p. p.) | ||
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| 520 | |a This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. | ||
| 546 | |a English | ||
| 653 | |a bipolar transistor amplifier | ||
| 653 | |a transistor optimization | ||
| 653 | |a transistor model | ||
| 653 | |a distributed amplifier | ||
| 653 | |a hetojunction bipolar transistor | ||
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