Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
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| HerausgeberIn: | |
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| Sonstige: | |
| Year of Publication: | 2021 |
| Language: | English |
| Physical Description: | 1 electronic resource (114 p.) |
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