AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...
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Year of Publication: | 2011 |
Language: | English |
Series: | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
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Physical Description: | 1 electronic resource (XI, 230 pages) |
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(CKB)4920000000101437 (oapen)https://directory.doabooks.org/handle/20.500.12854/40629 (EXLCZ)994920000000101437 |
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Kühn, Jutta. author. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications KIT Scientific Publishing 2011 1 electronic resource (XI, 230 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik. Open access Unrestricted online access star This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. English MMIC design power amplifier AlGaN/GaN HEMT X-band power-added efficiency 3-86644-615-2 |
language |
English |
format |
eBook |
author |
Kühn, Jutta. |
spellingShingle |
Kühn, Jutta. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik. |
author_facet |
Kühn, Jutta. |
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Kühn, Jutta. |
title |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_full |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_fullStr |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_full_unstemmed |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_auth |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_new |
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
title_sort |
algan/gan-hemt power amplifiers with optimized power-added efficiency for x-band applications |
series |
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik. |
series2 |
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik. |
publisher |
KIT Scientific Publishing |
publishDate |
2011 |
physical |
1 electronic resource (XI, 230 pages) |
isbn |
1000021579 3-86644-615-2 |
illustrated |
Not Illustrated |
work_keys_str_mv |
AT kuhnjutta alganganhemtpoweramplifierswithoptimizedpoweraddedefficiencyforxbandapplications |
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n |
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(CKB)4920000000101437 (oapen)https://directory.doabooks.org/handle/20.500.12854/40629 (EXLCZ)994920000000101437 |
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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
_version_ |
1796649061453922304 |
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