AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...

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Year of Publication:2011
Language:English
Series:Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
Physical Description:1 electronic resource (XI, 230 pages)
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spelling Kühn, Jutta. author.
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
KIT Scientific Publishing 2011
1 electronic resource (XI, 230 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
Open access Unrestricted online access star
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
English
MMIC design
power amplifier
AlGaN/GaN HEMT
X-band
power-added efficiency
3-86644-615-2
language English
format eBook
author Kühn, Jutta.
spellingShingle Kühn, Jutta.
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
author_facet Kühn, Jutta.
author_variant j k jk
author_role VerfasserIn
author_sort Kühn, Jutta.
title AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_full AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_fullStr AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_full_unstemmed AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_auth AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_new AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
title_sort algan/gan-hemt power amplifiers with optimized power-added efficiency for x-band applications
series Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
series2 Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
publisher KIT Scientific Publishing
publishDate 2011
physical 1 electronic resource (XI, 230 pages)
isbn 1000021579
3-86644-615-2
illustrated Not Illustrated
work_keys_str_mv AT kuhnjutta alganganhemtpoweramplifierswithoptimizedpoweraddedefficiencyforxbandapplications
status_str n
ids_txt_mv (CKB)4920000000101437
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carrierType_str_mv cr
is_hierarchy_title AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
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