AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches o...
Saved in:
| VerfasserIn: | |
|---|---|
| Year of Publication: | 2011 |
| Language: | English |
| Series: | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
|
| Physical Description: | 1 electronic resource (XI, 230 pages) |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
System Under Maintenance
Our Library Management System is currently under maintenance.
Holdings and item availability information is currently unavailable. Please accept our apologies for any inconvenience this may cause and contact us for further assistance: