Miniaturized Transistors, Volume II
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that mini...
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Filipovic, Lado edt Miniaturized Transistors, Volume II Basel MDPI - Multidisciplinary Digital Publishing Institute 2022 1 electronic resource (352 p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before. English Research & information: general bicssc Mathematics & science bicssc FinFETs CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy 3-0365-4169-1 3-0365-4170-5 Grasser, Tibor edt Filipovic, Lado oth Grasser, Tibor oth |
language |
English |
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author2 |
Grasser, Tibor Filipovic, Lado Grasser, Tibor |
author_facet |
Grasser, Tibor Filipovic, Lado Grasser, Tibor |
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l f lf t g tg |
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HerausgeberIn Sonstige Sonstige |
title |
Miniaturized Transistors, Volume II |
spellingShingle |
Miniaturized Transistors, Volume II |
title_full |
Miniaturized Transistors, Volume II |
title_fullStr |
Miniaturized Transistors, Volume II |
title_full_unstemmed |
Miniaturized Transistors, Volume II |
title_auth |
Miniaturized Transistors, Volume II |
title_new |
Miniaturized Transistors, Volume II |
title_sort |
miniaturized transistors, volume ii |
publisher |
MDPI - Multidisciplinary Digital Publishing Institute |
publishDate |
2022 |
physical |
1 electronic resource (352 p.) |
isbn |
3-0365-4169-1 3-0365-4170-5 |
illustrated |
Not Illustrated |
work_keys_str_mv |
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Miniaturized Transistors, Volume II |
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