Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...

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Seo, Jung-Hun
Year of Publication:2019
Language:English
Physical Description:1 electronic resource (138 p.)
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id 993544486704498
ctrlnum (CKB)4920000000095171
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spelling Seo, Jung-Hun auth
Wide Bandgap Semiconductor Based Micro/Nano Devices
MDPI - Multidisciplinary Digital Publishing Institute 2019
1 electronic resource (138 p.)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
English
ohmic contact
MESFET
optical band gap
wide-bandgap semiconductor
annealing temperature
junction termination extension (JTE)
channel length modulation
silicon carbide (SiC)
amorphous InGaZnO (a-IGZO)
light output power
GaN
electrochromism
large signal performance
passivation layer
4H-SiC
positive gate bias stress (PGBS)
asymmetric power combining
ultrahigh upper gate height
high electron mobility transistors
space application
gallium nitride (GaN)
phase balance
edge termination
distributed Bragg reflector
cathode field plate (CFP)
ammonothermal GaN
anode field plate (AFP)
W band
GaN high electron mobility transistor (HEMT)
1T DRAM
growth of GaN
tungsten trioxide film
thin-film transistor (TFT)
micron-sized patterned sapphire substrate
power added efficiency
T-anode
analytical model
AlGaN/GaN
harsh environment
high-temperature operation
amplitude balance
buffer layer
characteristic length
Ku-band
DIBL effect
I-V kink effect
flip-chip light-emitting diodes
high electron mobility transistors (HEMTs)
power amplifier
sidewall GaN
external quantum efficiency
breakdown voltage (BV)
threshold voltage (Vth) stability
regrown contact
AlGaN/GaN HEMT
TCAD
high electron mobility transistor (HEMT)
3-03897-842-6
language English
format eBook
author Seo, Jung-Hun
spellingShingle Seo, Jung-Hun
Wide Bandgap Semiconductor Based Micro/Nano Devices
author_facet Seo, Jung-Hun
author_variant j h s jhs
author_sort Seo, Jung-Hun
title Wide Bandgap Semiconductor Based Micro/Nano Devices
title_full Wide Bandgap Semiconductor Based Micro/Nano Devices
title_fullStr Wide Bandgap Semiconductor Based Micro/Nano Devices
title_full_unstemmed Wide Bandgap Semiconductor Based Micro/Nano Devices
title_auth Wide Bandgap Semiconductor Based Micro/Nano Devices
title_new Wide Bandgap Semiconductor Based Micro/Nano Devices
title_sort wide bandgap semiconductor based micro/nano devices
publisher MDPI - Multidisciplinary Digital Publishing Institute
publishDate 2019
physical 1 electronic resource (138 p.)
isbn 3-03897-843-4
3-03897-842-6
illustrated Not Illustrated
work_keys_str_mv AT seojunghun widebandgapsemiconductorbasedmicronanodevices
status_str n
ids_txt_mv (CKB)4920000000095171
(oapen)https://directory.doabooks.org/handle/20.500.12854/62681
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carrierType_str_mv cr
is_hierarchy_title Wide Bandgap Semiconductor Based Micro/Nano Devices
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