Wide Bandgap Semiconductor Based Micro/Nano Devices
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key...
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| Year of Publication: | 2019 |
| Language: | English |
| Physical Description: | 1 electronic resource (138 p.) |
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| 100 | 1 | |a Seo, Jung-Hun |4 auth | |
| 245 | 1 | 0 | |a Wide Bandgap Semiconductor Based Micro/Nano Devices |
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| 300 | |a 1 electronic resource (138 p.) | ||
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| 520 | |a While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices. | ||
| 546 | |a English | ||
| 653 | |a ohmic contact | ||
| 653 | |a MESFET | ||
| 653 | |a optical band gap | ||
| 653 | |a wide-bandgap semiconductor | ||
| 653 | |a annealing temperature | ||
| 653 | |a junction termination extension (JTE) | ||
| 653 | |a channel length modulation | ||
| 653 | |a silicon carbide (SiC) | ||
| 653 | |a amorphous InGaZnO (a-IGZO) | ||
| 653 | |a light output power | ||
| 653 | |a GaN | ||
| 653 | |a electrochromism | ||
| 653 | |a large signal performance | ||
| 653 | |a passivation layer | ||
| 653 | |a 4H-SiC | ||
| 653 | |a positive gate bias stress (PGBS) | ||
| 653 | |a asymmetric power combining | ||
| 653 | |a ultrahigh upper gate height | ||
| 653 | |a high electron mobility transistors | ||
| 653 | |a space application | ||
| 653 | |a gallium nitride (GaN) | ||
| 653 | |a phase balance | ||
| 653 | |a edge termination | ||
| 653 | |a distributed Bragg reflector | ||
| 653 | |a cathode field plate (CFP) | ||
| 653 | |a ammonothermal GaN | ||
| 653 | |a anode field plate (AFP) | ||
| 653 | |a W band | ||
| 653 | |a GaN high electron mobility transistor (HEMT) | ||
| 653 | |a 1T DRAM | ||
| 653 | |a growth of GaN | ||
| 653 | |a tungsten trioxide film | ||
| 653 | |a thin-film transistor (TFT) | ||
| 653 | |a micron-sized patterned sapphire substrate | ||
| 653 | |a power added efficiency | ||
| 653 | |a T-anode | ||
| 653 | |a analytical model | ||
| 653 | |a AlGaN/GaN | ||
| 653 | |a harsh environment | ||
| 653 | |a high-temperature operation | ||
| 653 | |a amplitude balance | ||
| 653 | |a buffer layer | ||
| 653 | |a characteristic length | ||
| 653 | |a Ku-band | ||
| 653 | |a DIBL effect | ||
| 653 | |a I-V kink effect | ||
| 653 | |a flip-chip light-emitting diodes | ||
| 653 | |a high electron mobility transistors (HEMTs) | ||
| 653 | |a power amplifier | ||
| 653 | |a sidewall GaN | ||
| 653 | |a external quantum efficiency | ||
| 653 | |a breakdown voltage (BV) | ||
| 653 | |a threshold voltage (Vth) stability | ||
| 653 | |a regrown contact | ||
| 653 | |a AlGaN/GaN HEMT | ||
| 653 | |a TCAD | ||
| 653 | |a high electron mobility transistor (HEMT) | ||
| 776 | |z 3-03897-842-6 | ||
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