EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR / / hrsg. von Edgar Richter, Karl Hohmuth.
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Table of Contents:
- Frontmatter
- CONTENTS
- INVITED PAPERS
- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS
- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS
- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION
- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON
- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION
- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY
- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON
- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD)
- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS
- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS
- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION
- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS
- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR
- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS
- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM
- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS
- SUBMITTED PAPERS
- 1. IMPLANTATION INTO SILICON
- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON
- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING
- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION
- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON
- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING
- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM
- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE
- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION
- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS
- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL
- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT
- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION
- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS
- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS
- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS
- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION
- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS
- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER
- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING
- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS
- AMORPHIZATION OF CD-IMPLANTED GAAS
- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING
- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE
- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION
- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES
- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM
- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP
- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES
- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS
- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE
- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS
- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES
- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION
- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING
- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON
- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING
- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES
- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE
- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON
- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON
- 4. SILICIDES
- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM
- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS
- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES
- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION
- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE
- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP
- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si
- 5. IMPLANTATION INTO METALS
- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS
- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION
- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS
- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY
- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING
- IMPLANTATION INDUCED TEXTURE
- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING
- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION
- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS
- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION
- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE
- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS
- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe
- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS
- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS
- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING
- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION
- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION
- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION
- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM
- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS
- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS
- LASER BEAM MODIFICATION OF OPTICAL FILMS
- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM
- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS
- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS
- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES
- 7. MATERIALS DEPOSITION
- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION
- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS
- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM
- ION BEAM ASSISTED DEPOSITION OF Al ON Fe
- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD
- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING
- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS
- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION
- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION
- 8.
- SILICON ON INSULATORS
- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON
- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING
- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING
- SOI STRUCTURES FORMATION BY PULSED HEATING
- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING
- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS
- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS
- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON
- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS
- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY
- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS
- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS
- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS
- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS
- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION
- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE
- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM
- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh
- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS
- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS
- A LITHIUM LIQUID METAL ION SOURCE
- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS
- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS
- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA
- PLASMATRON ION SOURCE FOR ION IMPLANTATION
- CEMS STUDY ON ALUMINIUM IMPLANTED IRON
- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS
- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE
- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY
- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS
- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE
- 10. HIGH TEMPERATURE SUPERCONDUCTORS
- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS
- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS
- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION
- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING
- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING
- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS
- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION
- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD
- 11. FUNDAMENTALS
- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING
- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION
- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR
- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION
- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION
- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES
- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS
- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY
- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS
- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON
- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES
- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION
- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES
- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS
- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS
- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES
- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION
- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION
- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION
- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES
- NUCLEATION A? VARYING TEMPERATURES
- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION
- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES
- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS
- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION
- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits
- LATE PAPER
- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING
- Author
- Physical Research
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