EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR / / hrsg. von Edgar Richter, Karl Hohmuth.

• Superior document: Title is part of eBook package: De Gruyter DGBA Physical Sciences <1990
• MitwirkendeR: Ageev, V. .,; Akchulakov, M. T.,; Albert, M.,; Albrecht, J.,; Aleksandrov, L. N.,; Aleshin, A. N.,; Aliev, V. Sh.,; Antropov, A. lf.,; Arbuzov, V. Y.,; Artsimovich, M. V.,; Ascheron, C.,; Bachmann, T.,; Baghaev, V. N.,; Baither, D.,; Bakaj, A. S.,; Balandin, V. Iu.,; Baljtjba, V. I.,; Baltramiejünas, R.,; Bandurin, Yu. A.,; Banisch, R.,; Barabanenkov, M. Y.,; Baranov, A. N.,; Bartl, Rolf-Reiner,; Bartsch, H.,; Baryakhtar, I.V.,; Bayadilov, E. M.,; Becker, S.,; Belousov, V. T.,; Benyagoub, A.,; Berova, D.,; Bertolotti, M.,; Bialoskozewski, J.,; Bischoff, L.,; Blochwitz, C.,; Bobeth, M.,; Bobitski, Ya. V.,; Bogdenovich, B.Yu.,; Brauns, B.,; Budinavičius, J.,; Bugiel, E.,; Bumay, Yu. A.,; Burenkov, A. F.,; Busin, Y. G.,; Byzhnitsyn, A. B.,; Bärinann, J.,; Cestari, C.,; Checha, V. P.,; Chelnokov, V. E.,; Chernakova, A.,; Chernenko, S. V.,; Choi, G. H.,; Choi, Kong Hyon,; Choupyatova, L.,; Chudoba, T.,; Cháb, V.,; Claverie, A.,; Climent, A.,; Craciun, V.,; Dancheva, E.,; Danilin, A.B.,; Danilovich, J.,; De Veirman, Ann,; Deltschew, R.,; Dement’ev, B.P.,; Demkovich, I. V.,; Deshkovskaya, A. A.,; Dietsch, R.,; Dietze, H. J.,; Dilk, I. A.,; Domanevskii, D. S.,; Domanewskii, D. S.,; Domorod, N. E.,; Donnet, C.,; Drako, V. M.,; Drandarov, Novak,; Drechsler, L.,; Driesel, W.,; Drigo, A. V.,; Dudonis, J.,; Dvurechenskii, A. V.,; Dvurechenskii, A.V.,; Dvurechensky, A. V.,; Emiraliev, A.,; Eolikaaakas, V. S.,; Erfurth, M.,; Erikhodko, I. I.,; Evseev, B. S.,; Feodorov, A. N.,; Ferrari, A.,; Feudel, T.,; Filimonov, Yu. V.,; Fischer, K.,; Furmonavičius, D.,; Gancharik, T. S.,; Garapadskii, A. A.,; Gavrilov, M. M.,; Gaška, R.,; Geiler, H. D.,; Geisler, V. A.,; Geßner, T.,; Gilpérez, J. M.,; Goltsev, V. P.,; Gorbachenko, S. G.,; Gorin, S. N.,; Gotra, Z. Fu.,; Gotra, Z. Yu.,; Grande, I. Y.,; Gribkovskii, R. V.,; Grigorjev, L. S.,; Groetzschel, R.,; Grotzachel, F.,; Grótzschel, R.,; Grötzschel, R.,; Grünewald, W.,; Gunot, U.,; Gupta, A.,; Gusakov, G. M.,; Gusinsky, G. M.,; Guzman, L.,; Gänsicke, F.,; Gärtner, K.,; Götz, G.,; Hee, V.,; Heera, V.,; Helming, K.,; Hemment, P. L. F.,; Henke, D.,; Hentschel, E.,; Hentschel, R.,; Hertens, A.,; Hesse, K.,; Hevesi, I.,; Hevolin, T. H.,; Heydenreich, J.,; Hlávka, J.,; Hoehl, D.,; Hoeppner, K.,; Hoffmann, W.,; Hohauth, K.,; Horoderiski, A.,; Höfner, P.,; Hörig, W.,; Hüller, J.,; Itin, V. I.,; Ivanov, O. M.,; Ivlev, G. D.,; Iwaki, Masaya,; Jiřfček, P.,; Jiřífiček, P.,; Johansen, H.,; Kachurin, G. A.,; Kaczanowski, J.,; Kagadey, V. A.,; Kalinushkin, V. P.,; Kanter, B. Z.,; Kasko, I. V.,; Kazak, L. A.,; Kazdaev, Kh. R.,; Kejhar, Martin,; Kelly, Roger,; Keßler, G.,; Khabelaehvili, I. D.,; Khabelashvili, I. D.,; Khaibullin, I. B.,; Khodasevich, V. V.,; Khodaseyich, V. V.,; Khomsevich, V. V.,; Khytko, V. I.,; Knothe, P.,; Koch, E.,; Kogler, R.,; Kolltsch, A.,; Kolodii, V. N.,; Kolshlbaeva, G. H.,; Kolyadenko, S. H.,; Kolyadenko, S. N.,; Komar, V. P.,; Komarov, F. F.,; Komarov, P. P.,; Komarovsky, I. A.,; Konopljanik, G. G.,; Konov, V. I.,; Kopchenov, V. I.,; Korenev, S. A.,; Korobeinlkov, V. P.,; Korotov, V. F.,; Korshunov, F. P.,; Kostjunin, A. A.,; Kothari, D. C.,; Kotljarevsky, M. B.,; Kotte, R.,; Kreißig, U.,; Krjuchkov, Yu. Yu.,; Krynicki, J.,; Kubátová, J.,; Kuclriavtsev, E. M.,; Kukovitsky, E. F.,; Kulikauskas, V. S.,; Kulyasova, O. A.,; Kuokštis, E.,; Kuroohkina, T. V.,; Kuzemchenko, T. A.,; Kuzmichov, A. V.,; Kuzmin, O. S.,; Küchler, R.,; Landi, E.,; Langner, J.,; Laschena, M.,; Lebedeva, N. I.,; Leggieri, G.,; Lehmann, D.,; Lemke, H.,; Lenkeit, K.,; Leshchenko, M. E.,; Leshchenko, M.E.,; Ligachev, A. E.,; Limanov, A. B.,; Linnros, Jan,; Liu, Bai-Xin,; Luches, A.,; Lukeš, I.,; Lutterotti, L.,; Lyaenko, V. S.,; Lychagin, D. V.,; Lykov, S. V.,; Lysenko, Eh. V.,; Lysenko, V. S.,; Lämmel, B.,; Makarov, V. H.,; Makarov, V. N.,; Makhmudov, M. A.,; Malinin, A. A.,; Maller, H.,; Manenkov, A. A.,; Manzhosov, Yu. A.,; Marest, G.,; Martino, M.,; Martínez-Duart, J. M.,; Maslakov, A. I.,; Matthai, J.,; Mesyats, G. A.,; Metzig, K.,; Mihailescu, I. N.,; Mikhailova, G. N.,; Miller, B.,; Milutin, V. M.,; Minaev, S. A.,; Miotello, A.,; Mogilnik, I. F.,; Moncoffre, N.,; Mordkovich, V. N.,; Muller, R.,; Murzin, I. G.,; Musatova, L. V.,; Müller, A.,; Müller, H.,; Nachring, F. K.,; Naehring, F. K.,; Nanai, L.,; Nazarov, A. N.,; Neahov, F. G.,; Neelmeijer, C.,; Netikšis, V.,; Neubert, F.,; Neumann, H.,; Nevolin, T. N.,; Nikitenkov, N. N.,; Niklforov, A. I.,; Nikolov, Borlslav,; Nikonov, A. A.,; Novikov, A. P.,; Novikov, A.,; Novikov, P. L.,; Novikova, G. M.,; Oang, Quoc Chung,; Orlenko, V. F.,; Ortlepp, H. G.,; Otto, G.,; Otto, Th.,; Ozhur, G. E.,; Ozur, G. E.,; Panknin, D.,; Panzner, M.,; Pattachov, Ta. V.,; Pavienko, A. A.,; Pavlovich, V. N.,; Peksheva, T. E.,; Perrière, J.,; Petrauskas, M.,; Petrov, S. A.,; Petrov, V. A.,; Petukhov, V. Yu.,; Pham, M.T.,; Pichugin, V. F.,; Piekoszewski, J.,; Pirrwitz, A.,; Pivovar, V. S.,; Plotnikov, A. E.,; Plotnikov, S.V,; Poape, W.,; Pochrybniak, C.,; Pogrebnjak, A A. D.,; Pogrebnjak, A. D.,; Polman, A.,; Pompe, A.,; Pompe, V.,; Pompe, W.,; Pons, F.,; Pop, S. S.,; Popor, B. T.,; Popov, P. B.,; Popov, V. P.,; Poshelt, M.,; Posselt, M.,; Potemkin, G. V.,; Prager, L.,; Pranevičius, L.,; Preuß, E.,; Principi, G.,; Proakurovaky, D. I.,; Proakurovskii, D. I.,; Proekuroveky, O. I.,; Prokofiev, D. D.,; Prokopenko, V. B.,; Proskuroveky, D. I.,; Proskurovsky, D. I.,; Psoskdhovsky, D. E.,; Pushkareva, G. V.,; Pyatkova, T. M.,; Quaranta, F.,; Quian, L. S.,; Radjabov, O.,; Rauschenbach, B.,; Reeson, K. J.,; Reiße, G.,; Remnjev, G. E.,; Reutberg, H.,; Reuther, H.,; Richter, E.,; Richter, F.,; Richter, H. H.,; Richter, K.,; Ritscheli, C.,; Romanov, I. G.,; Romanov, S. I.,; Romanuk, B. N.,; Rossi, M.,; Rotahtein, V. P.,; Rother, B.,; Rudko, G. Yu.,; Ruzimov, Sh. M.,; Ryzhnitsyn, A. B.,; Rzewuski, H.,; Röhrich, J.,; Sadovskaya, O. L.,; Savchenko, A. O.,; Scardi, P.,; Schade, K.,; Schindler, A.,; Scholz, U.,; Schäfer, O.,; Schöneich, B.,; Schöneich, J.,; Semerak, M. M.,; Semyannikov, V. E.,; Shalnov, A. V.,; Sharkeevt, Yu. P.,; Shlopak, N. V.,; Shmyrin, A. J.,; Shpilevsky, E. M.,; Siairoth, P.,; Sieber, N.,; Siegel, J.,; Sikolenko, V. V.,; Sinke, W. C.,; Sioshansi, Piran,; Skornyakov, I. V.,; Skorupa, W.,; Skorupa, Wolfgang,; Slobodich, S. V.,; Sobeslavsky, E.,; Sobolev, N. A.,; Solmi, S.,; Soroka, V. I.,; Sotnikov, G. V.,; Starikova, T. I.,; Stary, F.,; Stavrov, Vi.,; Steiger, B.,; Stekolnikov, A. F.,; Stepina, N. P.,; Stiller, W.,; Stock, D.,; Stolk, P. A.,; Strümpfe, J.,; Stuckerfc, I . A.,; Subotowicz, M.,; Suchaneck, G.,; Suvorov, A. V.,; Szüce, I. S.,; Tamulevičius, S.,; Tan, Fan,; Teselkin, A. V.,; Thomé, L.,; Tija, S. A.,; Tillack, B.,; Tkach, Yu. V.,; Tkachenko, A. S.,; Toaasz, Skrabka,; Tokarev, A. S.,; Tokarevski, V. V.,; Tolonics, J.,; Tomasi, A.,; Tousset, J.,; Tretiakov, V. V.,; Trifonov, I.,; Troitsky, V. Yu.,; Trushin, Yu. V.,; Turkin, A. A.,; Turos, A.,; Tyschenko, I. E.,; Uglot, V. V.,; Uglov, V. V.,; Ulyashin, A. B.,; Ulyashin, A. G.,; Urmanov, A. R.,; Ursu, I.,; Uvarov, V. T.,; Vajtai, R.,; Valakh, M. Ya.,; Valentini, A.,; Valyaev, A. N.,; Vanhellemonta, Jan,; Varbanov, R.,; Vasiliev, O.,; Vasilyev, A. L.,; Velikov, L. V.,; Vellmar, S.,; Vetter, E.,; Vetter, J.,; Vinzelberg, H.,; Vjatkin, A. P.,; Vobonkdv, V. P.,; Voelskow, M.,; Voevodova, A. V.,; Wagner, S.,; Weber, B.,; Werner, Z.,; Wesch, W.,; Wieser, E.,; Wohlfarth, D.,; Wolf, F.,; Wolf, R.,; Wolff, D.,; Wollschlager, K.,; Wollschläger, K.,; Yaaada, Isao,; Yakubovlch, N. I.,; Yanovski, V. P.,; Yanovskii, V. P.,; Yurchenko, V. A.,; Zaitsev, A. M.,; Zaroslov, D. Yu.,; Zarqba, J.,; Zchukova, I. B.,; Zemek, J.,; Zenkevich, A. V.,; Zenkevich, A.V.,,; Zhukova, S. I.,; Zhvavyi, S. P.,; Zimmer, K.,; Zinovjev, V. A.,; Zohukova, T. B.,; Zotov, S. D.,
• HerausgeberIn: Hohmuth, Karl,; Richter, Edgar,
• Place / Publishing House: Berlin ;, Boston : : De Gruyter, , [2022]; ©1989
• Year of Publication: 2022
• Edition: Reprint 2021
• Language: German
• Series: Physical Research ; 13
• Physical Description: 1 online resource (594 p.)

Table of Contents

Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8.

SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research