Physica status solidi / A. / Volume 81, Number 2, : February 16 / / ed. by Görlich.
Saved in:
Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Original Papers
- Structure
- The Use of a Gas-Flow Proportional Counter for the Energetical Analysis of Photoelectrons under X-Ray Diffraction Conditions
- Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High Speed
- Tiber Morphology Resulting from Solid State Coalescence of Spherical Precipitates
- Influence of Annealing Treatments on the Density of Amorphous Fe40Ni40P14B6 and Fe5Co70Si15B10 Alloys
- Microstructural Properties of the ß-NiAl Phase in the Ternary Ni-Based Ni-Al-Ta Superalloys
- Film and Interface Analysis of InSb MOS Structures
- Defects, atomistic aspects
- The Role of Nonelastic Nuclear Processes in the Formation of Defect Clusters in Semiconductors Irradiated with High-Energy Protons
- The Application of the Wulff Construction to Dislocation Problems
- High-Temperature Internal Friction Peaks of Pure Aluminum Single-, Bi-, and Polycrystals Measured with an Inverted Flexure Pendulum
- Magnetic Anomalies of Self-Diffusion and Co Heterodiffusion in a-Fe
- Magnetism
- Electrical and Magnetic Properties of the Fe18Cr(30-40)Ni Alloys at Low Temperatures
- Barkhausen Jumps in a Dual-Phase Steel Treated in the Intercritical Temperature Bange
- Effects of Magnetostriction on Vibrations of Bloch and Néel Walls
- Localized electronic states and transitions
- Thermoluminescence Emission and Decay Kinetics of NaCl:SnCI2 Single Crystals
- Investigation of the Recombination Mechanism in GaAs0.11P0.89:N
- Photoluminescence and Optical Properties of Lithium-Doped MgxZn1-xTe Alloys
- Electric transport
- Optical Phonon Assisted Hopping in (DPPE)(TCNQ)5(H2O)
- An Equation for Dynamic Switching in Amorphous Thin Films
- A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices
- DC Conductivity and ESR of Hydrogenated Amorphous Carbon Films
- A Method for the Measurement of Thermal Conductivity, Thermal Diffusivity, and Other Transport Coefficients of Thin Films
- Device-related phenomena
- Basics of Electron-Impact-Excited Luminescence Devices
- Efficiency and Saturation in AC Thin Film EL Structures
- Comparison of MOCYD-Grown with Conventional H-VI Materials Parameters for EL Thin Films
- Selected Analytical Tools Yield a Better Insight into Electroluminescent Thin Films
- Electroluminescence of SiOx-LnF3 Thin Films
- Concentration and Field Dependences of Electroluminescence Decay Kinetics in ZnS:Mn Thin Film Structures
- Degradation Model of Red GaP LEDs
- Transfer Effects in ODMR Spectra of ZnSe:Mn
- Direct Current Electroluminescence in Rare-Earth-Doped Zinc Sulphide
- Mechanism oi Excitation of Rare-Earth Complexes in Electroluminescence Devices
- Optical Study of ZnS:Mn Thin Films with High Mn Concentrations
- EPR Investigations of ZnS:Mn and ZnSe:Mn. Single Crystals, Powders, Thin-Film Structures
- On the Polarization of Center Radiation in an Optically Thin Layer. The Resonator Effect on the Phototransition Probability
- Annealing of Luminescent ZnSe:Mn Thin Films by a Scanning CW Laser Beam
- On the Time Behaviour of Electron Impact Excitation in Thin Film Electroluminescent Devices
- On the Mechanism of Electron-Impact-Excited Luminescence in AC Thin Film Devices: ZnSe:Mn
- Minority Carrier Lifetime Measurements by Photoluminescence at Room Temperature in GaAs1-xPxN, Te (x = 0.70)
- Erratum
- Erratum zu: Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations
- Short Notes
- High Voltage Electron Microscopic (HVEM) Observations of Dislocations in Monocrystalline Gypsum
- 4-Cyano-1,3,6-triazacycl[3.3.3]azine — A Homomolecular Organic Semiconductor
- Glass-Crystal Transitions in Materials in the System As2S3-As2Te3
- High Concentration Fe-Cu and Fe-Ag Alloys Produced by Vapor Quenching
- The Surface Roughness Effect in Texture Measurements by the Schulz X-Ray Reflection Method
- Light Scattering by Defects in TGS
- The Investigation of Hydrogen Diffusion in Palladium by the Chemichromic Effect
- Anomalous Heat Conduction of Ion-Implanted Amorphous Layers in Silicon Crystals Using a Laser-Probe Technique
- Quantitative EBIC Investigations on Bulk Stacking Faults in Silicon
- Internal Friction in Ni-Zn Ferrites
- On the Nature of the X-Centers in KC1, Studied by Positron Angular Correlation
- The Influence of Minority Carrier Injection on Subthreshold Defects in Silicon
- Temperature Dependence of the Magnetic Susceptibility of Teniolite
- Thermopower and Resistivity in Correlation to B-Site Magnetic Ordering in Cu-Ni and Cu-Cd Ferrospinels
- Magnetic Field Sign Effect on Resonance Absorption in Domain Walls of Orthoferrites
- Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C
- Systems of Interacting Centers of Photoluminescence in RbMnF3 and KMnF3
- Lasting Relaxations and Residual Conductivity in InSe1-xSx Single Crystals
- Anomalous Effects of Adsorption on the Electric Conductivity of Some Organic Semiconductor Powders under Pressure
- Superconductivity and Atomic Ordering of Pd-Cu-H Solid Solutions
- Radiation Defects in Single Crystals of Zinc Diphosphide
- Electrical Properties of Annealed InSb Thin Films
- Emission Patterns of Tb Doped ZnS Bulk Crystals
- Pre-Frinted Titles
- Pre-Frinted Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b)
- Classification Scheme —Continued
- Backmatter
Similar Items
-
Physica status solidi. / Volume 2, Number 5, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 6, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Volume 2, Number 12, : 1962 / / ed. by E Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1990 ; Physica Status Solidi (b) Basic research, Volumes 157 to 162. Physica Status Solidi (a) Applied research, Volumes 117 to 122 / / ed. by E. Gutsche.
Published: ([2022]) -
Physica status solidi. / Subject and Author Index 1986 ; Physica Status Solidi (b). Basic research, Volumes 133–138. Physica status solidi (a). Applied Research, Volumes 93–98 / / ed. by E. Borchardt.
Published: ([2022])