Physica status solidi / A. / Volume 81, Number 2, : February 16 / / ed. by Görlich.
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Other title: | Frontmatter -- Classification Scheme -- Contents -- Original Papers -- Structure -- The Use of a Gas-Flow Proportional Counter for the Energetical Analysis of Photoelectrons under X-Ray Diffraction Conditions -- Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High Speed -- Tiber Morphology Resulting from Solid State Coalescence of Spherical Precipitates -- Influence of Annealing Treatments on the Density of Amorphous Fe40Ni40P14B6 and Fe5Co70Si15B10 Alloys -- Microstructural Properties of the ß-NiAl Phase in the Ternary Ni-Based Ni-Al-Ta Superalloys -- Film and Interface Analysis of InSb MOS Structures -- Defects, atomistic aspects -- The Role of Nonelastic Nuclear Processes in the Formation of Defect Clusters in Semiconductors Irradiated with High-Energy Protons -- The Application of the Wulff Construction to Dislocation Problems -- High-Temperature Internal Friction Peaks of Pure Aluminum Single-, Bi-, and Polycrystals Measured with an Inverted Flexure Pendulum -- Magnetic Anomalies of Self-Diffusion and Co Heterodiffusion in a-Fe -- Magnetism -- Electrical and Magnetic Properties of the Fe18Cr(30-40)Ni Alloys at Low Temperatures -- Barkhausen Jumps in a Dual-Phase Steel Treated in the Intercritical Temperature Bange -- Effects of Magnetostriction on Vibrations of Bloch and Néel Walls -- Localized electronic states and transitions -- Thermoluminescence Emission and Decay Kinetics of NaCl:SnCI2 Single Crystals -- Investigation of the Recombination Mechanism in GaAs0.11P0.89:N -- Photoluminescence and Optical Properties of Lithium-Doped MgxZn1-xTe Alloys -- Electric transport -- Optical Phonon Assisted Hopping in (DPPE)(TCNQ)5(H2O) -- An Equation for Dynamic Switching in Amorphous Thin Films -- A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices -- DC Conductivity and ESR of Hydrogenated Amorphous Carbon Films -- A Method for the Measurement of Thermal Conductivity, Thermal Diffusivity, and Other Transport Coefficients of Thin Films -- Device-related phenomena -- Basics of Electron-Impact-Excited Luminescence Devices -- Efficiency and Saturation in AC Thin Film EL Structures -- Comparison of MOCYD-Grown with Conventional H-VI Materials Parameters for EL Thin Films -- Selected Analytical Tools Yield a Better Insight into Electroluminescent Thin Films -- Electroluminescence of SiOx-LnF3 Thin Films -- Concentration and Field Dependences of Electroluminescence Decay Kinetics in ZnS:Mn Thin Film Structures -- Degradation Model of Red GaP LEDs -- Transfer Effects in ODMR Spectra of ZnSe:Mn -- Direct Current Electroluminescence in Rare-Earth-Doped Zinc Sulphide -- Mechanism oi Excitation of Rare-Earth Complexes in Electroluminescence Devices -- Optical Study of ZnS:Mn Thin Films with High Mn Concentrations -- EPR Investigations of ZnS:Mn and ZnSe:Mn. Single Crystals, Powders, Thin-Film Structures -- On the Polarization of Center Radiation in an Optically Thin Layer. The Resonator Effect on the Phototransition Probability -- Annealing of Luminescent ZnSe:Mn Thin Films by a Scanning CW Laser Beam -- On the Time Behaviour of Electron Impact Excitation in Thin Film Electroluminescent Devices -- On the Mechanism of Electron-Impact-Excited Luminescence in AC Thin Film Devices: ZnSe:Mn -- Minority Carrier Lifetime Measurements by Photoluminescence at Room Temperature in GaAs1-xPxN, Te (x = 0.70) -- Erratum -- Erratum zu: Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations -- Short Notes -- High Voltage Electron Microscopic (HVEM) Observations of Dislocations in Monocrystalline Gypsum -- 4-Cyano-1,3,6-triazacycl[3.3.3]azine — A Homomolecular Organic Semiconductor -- Glass-Crystal Transitions in Materials in the System As2S3-As2Te3 -- High Concentration Fe-Cu and Fe-Ag Alloys Produced by Vapor Quenching -- The Surface Roughness Effect in Texture Measurements by the Schulz X-Ray Reflection Method -- Light Scattering by Defects in TGS -- The Investigation of Hydrogen Diffusion in Palladium by the Chemichromic Effect -- Anomalous Heat Conduction of Ion-Implanted Amorphous Layers in Silicon Crystals Using a Laser-Probe Technique -- Quantitative EBIC Investigations on Bulk Stacking Faults in Silicon -- Internal Friction in Ni-Zn Ferrites -- On the Nature of the X-Centers in KC1, Studied by Positron Angular Correlation -- The Influence of Minority Carrier Injection on Subthreshold Defects in Silicon -- Temperature Dependence of the Magnetic Susceptibility of Teniolite -- Thermopower and Resistivity in Correlation to B-Site Magnetic Ordering in Cu-Ni and Cu-Cd Ferrospinels -- Magnetic Field Sign Effect on Resonance Absorption in Domain Walls of Orthoferrites -- Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C -- Systems of Interacting Centers of Photoluminescence in RbMnF3 and KMnF3 -- Lasting Relaxations and Residual Conductivity in InSe1-xSx Single Crystals -- Anomalous Effects of Adsorption on the Electric Conductivity of Some Organic Semiconductor Powders under Pressure -- Superconductivity and Atomic Ordering of Pd-Cu-H Solid Solutions -- Radiation Defects in Single Crystals of Zinc Diphosphide -- Electrical Properties of Annealed InSb Thin Films -- Emission Patterns of Tb Doped ZnS Bulk Crystals -- Pre-Frinted Titles -- Pre-Frinted Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classification Scheme —Continued -- Backmatter |
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Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112501344 9783110637342 |
DOI: | 10.1515/9783112501344 |
Access: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | ed. by Görlich. |
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