Physica status solidi / A. / Volume 109, Number 1, : September 16 / / ed. by Görlich.
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Table of Contents:
- Frontmatter
- Author Index
- Physica status solidi (a) applied research
- Contents
- Review Article
- Orientation and Strain in Heteroepitaxial Growth
- Original Papers and Short Notes
- Structure; crystallography
- Crystallization of Metallic Glass Fe 46 N 31 VSi 8 B 14
- Contrast of Small SiX Particles in Silicon by Computed HREM Images
- Icosahedral Phases in the Al-Fe-Cr Alloy System
- Trial Model for the Tilting Scheme in AgNbO3 Derived by Electron Diffraction and Imaging
- Anisotropie Deformation of a Crystal Plate and Its Analysis with X-Ray Diffraction Methods
- Interaction of Anti-Site Defects with Ge Impurity Atoms in Sb2Te3 Single Crystals
- X-Ray Reflection from and Transmission through a Plane-Parallel Dielectric Plate with Cosine-Like Polarizability (Symmetrical Laue Case)
- Etude structurale, par diffraction de R-X, des liaisons dans les semiconducteurs ternaires ZnSiAs2, ZnGeAs2 et ZnSnAs 2
- A New Approach for n-beam Lattice Image Calculation
- Defects; nonelectronic transport
- Accumulation and Transformation of Radiation Defects in Silicon under Different Doses and Intensities of Electron Irradiation
- Study of the Movement of Oxygen Vacancies in the Orthorhombic Phase of YBa2Cu3O 7-x by Positron Doppler Broadening Spectroscopy
- Redistribution of Boron in Silicon by High-Temperature Irradiation with Heavy Ions
- Dislocation Groups, Multipoles, and Friction Stresses in a-CuZn Alloys
- Lattice properties
- Deformation Mechanism Maps and Gettering Diagrams for Single-Crystal Silicon
- TEM Study of Phases and Domains in NaNbO3 at Room Temperature
- Low Temperature Plasticity of Brittle Materials
- EPR Study of SO 4 Radicals in K4LiH3(SO4)4 Crystals
- X-Ray Analysis of Residual Stress State with Variable Components of Stress Tensor
- Surfaces, interfaces, thin films; lower-dimensional systems
- The Complex AC Susceptibility of Superconducting Y-Bar-CuO Thin Film and Bulk Samples
- The Current Characteristics of p-i-n and p+-i-p+ Structures Based on Hydrogenated Amorphous Silicon at Various Temperatures and Excitation Levels
- A Reinvestigation of Ni2Si Thin Film Growth on Si(lll) by TEM and RBS
- Structural Analysis of Silicon Doped with High Doses of C+ Ions
- Protective Coatings on GaAs and InP
- Transient Photocurrents in a-Si:H Diodes: Effects of Deep Trapping
- Mechanism of Voltage Generation in Bi Films Due to Laser Irradiation
- Determination of Semiconductor Parameters by Electron Beam Induced Current and Cathodoluminescence Measurements
- Localized electronic states
- Silver Related Deep Levels in Silicon
- DLTS Study of Deep Level Defects in Cz n-Si Due to Heat Treatment at 600 to 900 °C
- Investigation of the Oxygen Vacancy Balance in ZnO Ceramics by Means of EPR
- Electronic transport; superconductivity
- The Internal Strain Effect on T0 in the Y-Ba-Al-Cu Oxide Superconductor
- Magnetic properties; resonances
- Low-Temperature Magnetic Transformations in Ferrous Fluorsilicate Induced by Pressure
- On the Influence of Internal Stress and Magnetizing Frequency on Domain Wall Motion in High-Purity Ni
- Cluster Structure of the Li-Ti-Zn Ferrite System Studied by Neutron Scattering
- Dielectric and optical properties
- The Indirect Allowed Optical Transitions in (Ga 0.3 In 0.7)2 Se 3
- Positron Annihilation Studies in Non-Metallic Solids: d-Camphor and Silver Iodide
- Nonlinear I-U Characteristics and Photoelectret State in Sillenite-Type Crystals
- Computer Simulation Experiment on the mm-Wave Properties of Indium Phosphide Double Drift Impatts
- Short Notes
- A Special Metastable Phase of Metallic Glass Pd 77.5 Ni 6 Si 16.5
- SEM-EBIC Investigations of Grain Boundaries in Cadmium Telluride
- Detection of the Active Layer of A III B V Semiconductor Quantum-Well Structures by High Resolution X-Ray Diffractometry
- Structure and Properties of Implanted Steels
- A/2 < 110> Dislocations at the y/y' Interface in a Ni-Based Superalloy
- Two Trapping Centers in the Photoplastic Effect in CdS
- Ru-Metal Segregation in Borosilicate Glasses
- Melting of Multilayered Structures under Pulse Heating (Computational Experiment)
- Non-Equilibrium Gradient-Zone Crystallization in Semiconductors
- Contact Resistance Reduction by Implanted n+ -Layers at the Ni/AuGe- GaAs System
- IR and ESR Studies of the Structural Properties of Hydrogenated Amorphous Carbon Films
- Electron Microscopy and Optical Studies of Chemically Deposited CuInS2 Thin Films
- Electrical Activity Peculiarities of Tin and Iron Impurities in the Semiconducting Glass Ge 28.5 Pb 15S 56.5
- Photoconductivity and Luminescence Spectra of ZnIn2S4 Crystals Irradiated by y-Quanta
- NMR-Spectroscopy Study of Ca(Cu 30-x Mn x )Mn 4 O 12 Perovskites
- Magnetization in Films with Modulated Surfaces
- Magnetic Properties of UCuGe
- On the Stress Dependence of the Saturation Magnetostriction in Amorphous Alloys
- Effect of Thickness and Length of the Sample on the Dielectric Constant (e') and Loss (e") Measurements in the Microwave Cavity Perturbation Technique
- Thermally Stimulated Electron Emission from Triglycine Sulphate Crystals Excited by AC Electric Field
- Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b)
- Substance Classification
- Backmatter
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