Physica status solidi / A. / Volume 45, Number 2, : February 16 / / hrsg. von Görlich.
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Table of Contents:
- Frontmatter
- Classification Scheme
- Contents
- Systematic List
- Original Papers
- The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation
- Measurement of the Electron Drift Velocity in InSb up to Fields of 800 V/cm in the Presence of Impact Ionization
- Strain Energy Controlled Shape of Crystals Forming Due to a Martensite Transformation or Decomposition
- On the Theory of Plastic Deformation with an Account of Dislocation Transformations of Several Types
- Electron Channeling in <111> Direction of Tungsten Crystals II. Energy Range of 1000 to 2000 keV2)
- Annealing Spectrum of Cold-Worked Dilute Al-Li Alloys
- Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors
- Laser Induced Gratings in CdS
- α-Particle Irradiation Damage and Stage I Recovery in Zinc2)
- Magnetocrystalline Anisotropy of Pr(Co1_xCux)5 Compounds Experiment and Theoretical Analysis
- Plastic Deformation of Calcite Single Crystals Deformed in Compression Parallel to [111]
- Photoconductivity and the Negative Differential Photo-Effect in Sulfur-Annealed ZnS Single Crystals
- On the Ordering of Fe Atoms in FexNbS2
- ESR Studies of a Diacetylene Polymer I. Partially Crystalline Polymer Extracts
- Evidence for the Interaction between Magnetic Domain Walls and Dislocations in High-Purity Iron from Magnetomechanical Damping Experiments
- Etude au moyen de l'ordre directionnel d'une série de ferrites de manganèse à excès de manganèse Valence des cations et répartition de ces ions sur les sites A et B
- Autoradiographic Detection of Getter Effect of Argon-Implanted Layers in Silicon
- Ultrasonic Investigation of the Phase Transitions in NH4Cl 1-x Brx Mixed Crystals
- p-n Junctions in the Surface Region of Silicon Obtained by Evaporation of Silicon in Ultrahigh Vacuum
- Lattice Location and Determination of Thermal Amplitudes of Deuterium in a-PdD0.007by Channeling
- Optical Properties of PbxSn 1-x O2Films2)
- The Mean Square Atomic Displacements and Enthalpies of Vacancy Formation in Some Semiconductors
- Coupling of Surface Acoustic Waves Propagating in Two Separated Piezoelectric Media
- A Study by Transmission Electron Microscopy and Diffraction of the Ternary Alloy System Cu2AuPd2
- AC Conductivity of CdAs2-Based Glasses1
- Spreading of Extrinsic Grain Boundary Dislocations in Plastically Deformed Aluminium
- Current Controlled Negative Resistance in GaAs at Low Temperatures
- Numerical Simulation of the AC Electrical Properties of Random Inhomogeneous Systems Application to Heat-Treated Polymers
- New High-Pressure Phase in [Ni(NH3)6] (CLO4)2 Detected by EPR
- Structure magnétique des MnCoSi
- ESR of Copper-Doped β-Alumina Localization of Cu 2+ and Linewidth Effect
- Magnetic Properties of Transition Metal-Metalloid Glasses A Charge Transfer Model
- The Seebeck Effect on Nb-Doped Ti02 Rutile
- α <100> Dislocation Loops in Magnesium Oxide
- Regime of Contact Emission Limited Current with Weak Harmonic Distortion of Steady Bias
- Influence of Upper Laue Areas on Fine Structure of Bend Contours near a High Symmetry Axis
- Dynamic Holograms on the Superposition States of Atoms
- The Diffusion of Iron in Copper and of Nickel in Silver
- Structure of Vacuum Evaporated CdxZn 1-x S Thin Films
- Schottky Barrier on W-GUAs Contact
- Figure
- Short Notes
- Imaging of Photorefractive Effects in LiNbO3 by Double Crystal X-Ray Reflection Topography
- Comparison of Positron Annihilation and X-Ray Estimations of the Dislocation Density and Depth of Dislocation Profiles in Nickel T ransformed into Hydride and Decomposed
- The Role of Different Local Centres in the Determination of the Concentration Dependence of the Intrinsic Emission Intensity in n-Type GaAs
- Photoconductivity of p-Type CdSnP2 Single Crystals
- Spin-Lattice Relaxation at High Temperatures in Heavily Doped n-Type Silicon
- Investigation of Magnetic Preferred Directions in an Fe-Mn Base Alloy
- Hyperfine Magnetic Field at Sn in Heusler Alloys Rh2MnSn and Rh2NiSn
- Current Pulses in ZnS;Cu Crystals Stimulated by Electric Field at Low Temperatures
- Surface Structure Determination via LEED Rotation Diagrams and the Relaxation of W (001)
- A Comparison of Calculated Arsenic Implantation Profiles in Silicon with Experimental Results
- A Simple Method for the Determination of Parameters of Ion Implanted Doping Profiles by Means of Threshold Voltage Measurements of MOSFET's
- Solute-Vacancy Binding Energies in Magnesium Alloys
- On the Creep of Germanium and Silicon
- On the Mossbauer Spectrum of FeC2O4·2H2O
- Paramagnetic Behaviour of Gd(FexCo 1-x)2 Compounds
- Magnetic Properties and Structures of TbAlGa and HoAlGa
- Some Electrical Properties of Bi2O3 Thin Films
- Positron Annihilation for Martensite Defect Identification
- Photocurrents through Polythiourea and Polymalononitrile Thin Films
- Channeling Studies of As-Grown GaN
- Mechanoluminescent Spectra of Silicon Carbide Powders
- Growth of AL2O3 Layer on MBE GaAs
- Some New Aspects of the SCLC Characteristic of Homogeneous Insulators with Traps
- Piezoconductivity of ft-Rhombohedral Boron
- Pre-printed Titles
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