Physica status solidi / A. / Volume 45, Number 2, : February 16 / / hrsg. von Görlich.
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Other title: | Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Original Papers -- The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation -- Measurement of the Electron Drift Velocity in InSb up to Fields of 800 V/cm in the Presence of Impact Ionization -- Strain Energy Controlled Shape of Crystals Forming Due to a Martensite Transformation or Decomposition -- On the Theory of Plastic Deformation with an Account of Dislocation Transformations of Several Types -- Electron Channeling in <111> Direction of Tungsten Crystals II. Energy Range of 1000 to 2000 keV2) -- Annealing Spectrum of Cold-Worked Dilute Al-Li Alloys -- Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors -- Laser Induced Gratings in CdS -- α-Particle Irradiation Damage and Stage I Recovery in Zinc2) -- Magnetocrystalline Anisotropy of Pr(Co1_xCux)5 Compounds Experiment and Theoretical Analysis -- Plastic Deformation of Calcite Single Crystals Deformed in Compression Parallel to [111] -- Photoconductivity and the Negative Differential Photo-Effect in Sulfur-Annealed ZnS Single Crystals -- On the Ordering of Fe Atoms in FexNbS2 -- ESR Studies of a Diacetylene Polymer I. Partially Crystalline Polymer Extracts -- Evidence for the Interaction between Magnetic Domain Walls and Dislocations in High-Purity Iron from Magnetomechanical Damping Experiments -- Etude au moyen de l'ordre directionnel d'une série de ferrites de manganèse à excès de manganèse Valence des cations et répartition de ces ions sur les sites A et B -- Autoradiographic Detection of Getter Effect of Argon-Implanted Layers in Silicon -- Ultrasonic Investigation of the Phase Transitions in NH4Cl 1-x Brx Mixed Crystals -- p-n Junctions in the Surface Region of Silicon Obtained by Evaporation of Silicon in Ultrahigh Vacuum -- Lattice Location and Determination of Thermal Amplitudes of Deuterium in a-PdD0.007by Channeling -- Optical Properties of PbxSn 1-x O2Films2) -- The Mean Square Atomic Displacements and Enthalpies of Vacancy Formation in Some Semiconductors -- Coupling of Surface Acoustic Waves Propagating in Two Separated Piezoelectric Media -- A Study by Transmission Electron Microscopy and Diffraction of the Ternary Alloy System Cu2AuPd2 -- AC Conductivity of CdAs2-Based Glasses1 -- Spreading of Extrinsic Grain Boundary Dislocations in Plastically Deformed Aluminium -- Current Controlled Negative Resistance in GaAs at Low Temperatures -- Numerical Simulation of the AC Electrical Properties of Random Inhomogeneous Systems Application to Heat-Treated Polymers -- New High-Pressure Phase in [Ni(NH3)6] (CLO4)2 Detected by EPR -- Structure magnétique des MnCoSi -- ESR of Copper-Doped β-Alumina Localization of Cu 2+ and Linewidth Effect -- Magnetic Properties of Transition Metal-Metalloid Glasses A Charge Transfer Model -- The Seebeck Effect on Nb-Doped Ti02 Rutile -- α <100> Dislocation Loops in Magnesium Oxide -- Regime of Contact Emission Limited Current with Weak Harmonic Distortion of Steady Bias -- Influence of Upper Laue Areas on Fine Structure of Bend Contours near a High Symmetry Axis -- Dynamic Holograms on the Superposition States of Atoms -- The Diffusion of Iron in Copper and of Nickel in Silver -- Structure of Vacuum Evaporated CdxZn 1-x S Thin Films -- Schottky Barrier on W-GUAs Contact -- Figure -- Short Notes -- Imaging of Photorefractive Effects in LiNbO3 by Double Crystal X-Ray Reflection Topography -- Comparison of Positron Annihilation and X-Ray Estimations of the Dislocation Density and Depth of Dislocation Profiles in Nickel T ransformed into Hydride and Decomposed -- The Role of Different Local Centres in the Determination of the Concentration Dependence of the Intrinsic Emission Intensity in n-Type GaAs -- Photoconductivity of p-Type CdSnP2 Single Crystals -- Spin-Lattice Relaxation at High Temperatures in Heavily Doped n-Type Silicon -- Investigation of Magnetic Preferred Directions in an Fe-Mn Base Alloy -- Hyperfine Magnetic Field at Sn in Heusler Alloys Rh2MnSn and Rh2NiSn -- Current Pulses in ZnS;Cu Crystals Stimulated by Electric Field at Low Temperatures -- Surface Structure Determination via LEED Rotation Diagrams and the Relaxation of W (001) -- A Comparison of Calculated Arsenic Implantation Profiles in Silicon with Experimental Results -- A Simple Method for the Determination of Parameters of Ion Implanted Doping Profiles by Means of Threshold Voltage Measurements of MOSFET's -- Solute-Vacancy Binding Energies in Magnesium Alloys -- On the Creep of Germanium and Silicon -- On the Mossbauer Spectrum of FeC2O4·2H2O -- Paramagnetic Behaviour of Gd(FexCo 1-x)2 Compounds -- Magnetic Properties and Structures of TbAlGa and HoAlGa -- Some Electrical Properties of Bi2O3 Thin Films -- Positron Annihilation for Martensite Defect Identification -- Photocurrents through Polythiourea and Polymalononitrile Thin Films -- Channeling Studies of As-Grown GaN -- Mechanoluminescent Spectra of Silicon Carbide Powders -- Growth of AL2O3 Layer on MBE GaAs -- Some New Aspects of the SCLC Characteristic of Homogeneous Insulators with Traps -- Piezoconductivity of ft-Rhombohedral Boron -- Pre-printed Titles |
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Format: | Mode of access: Internet via World Wide Web. |
ISBN: | 9783112480724 9783110637342 |
DOI: | 10.1515/9783112480724 |
Access: | restricted access |
Hierarchical level: | Monograph |
Statement of Responsibility: | hrsg. von Görlich. |
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