Nano Devices and Sensors / / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung.

The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers,...

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Bibliographic Details
Superior document:Title is part of eBook package: De Gruyter DG Plus eBook-Package 2016
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Place / Publishing House:Berlin ;, Boston : : De Gruyter, , [2016]
©2016
Year of Publication:2016
Language:English
Online Access:
Physical Description:1 online resource (VIII, 220 p.)
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Table of Contents:
  • Frontmatter
  • Editorial/Foreword
  • Contents
  • Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
  • Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation
  • Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory
  • Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
  • A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory
  • On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System
  • A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications
  • A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission
  • Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices
  • Impact-Based Area Allocation for Yield Optimization in Integrated Circuits
  • Editors
  • List of authors