Nano Devices and Sensors / / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung.
The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers,...
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Place / Publishing House: | Berlin ;, Boston : : De Gruyter, , [2016] ©2016 |
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Nano Devices and Sensors / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. Berlin ; Boston : De Gruyter, [2016] ©2016 1 online resource (VIII, 220 p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier text file PDF rda Frontmatter -- Editorial/Foreword -- Contents -- Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors restricted access http://purl.org/coar/access_right/c_16ec online access with authorization star The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book. Mode of access: Internet via World Wide Web. In English. Description based on online resource; title from PDF title page (publisher's Web site, viewed 30. Aug 2021) Technology & Engineering / Electronics / Semiconductors. bisacsh Abraham, Billion, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Abraham, Billion. Chang, Kuan-Chang, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chang, Kuan-Chang. Chang, Ting-Chang, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chang, Ting-Chang. Chang, Yao-Feng, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chang, Yao-Feng. Chen, Poki, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chen, Poki. Chen, Shen-Li, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chen, Shen-Li. Chen, Yen-Ting, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chen, Yen-Ting. Chen, Ying-Chen, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Chen, Ying-Chen. Chung, Yung-Hui , editor. edt http://id.loc.gov/vocabulary/relators/edt Chung, Yung-Hui, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Fowler, Burt, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Fowler, Burt. Huang, Shun-Zhao, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Huang, Shun-Zhao. Huang, Yu-Ting, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Huang, Yu-Ting. Hwang, Hyunsang, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Hwang, Hyunsang. Jiang, Chunsheng, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Jiang, Chunsheng. Lee, Jack C. Lee, Jack C., contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Lee, Tzung-Je, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Lee, Tzung-Je. Liang, Renrong, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Liang, Renrong. Liaw, Shien-Kuei , editor. edt http://id.loc.gov/vocabulary/relators/edt Lin, Chun-Ju, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Lin, Chun-Ju. Liou, Juin J. , editor. edt http://id.loc.gov/vocabulary/relators/edt Osintsev, Dmitri, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Osintsev, Dmitry. Pan, Chih-Hung, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Prakash, Amit, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Prakash, Amit. Selberherr, Siegfried . Selberherr, Siegfried, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Sverdlov, Viktor, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Sverdlov, Viktor. Sze, Simon M. Sze, Simon M., contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Tsai, Cheng-Hsun, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Tsai, Cheng-Hsun. Tsai, Tsung-Ming, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Tsai, Tsung-Ming. Wang, Jing, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Wang, Jing. Wang, Yanzhen, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Wang, Yanzhen. Widodo, Arif, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Widodo, Arif. Wu, Chang-Hsi, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Wu, Chang-Hsi. Wu, Xiaohan, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Wu, Xiaohan. Xu, Jun, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Xu, Jun. Xue, Fei, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Xue, Fei. Yen, Chia-Wei, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Yen, Chia-Wei. You, Hong-Cheng, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb You, Hong-Cheng. Zhou, Fei, contributor. ctb https://id.loc.gov/vocabulary/relators/ctb Zhou, Fei. Title is part of eBook package: De Gruyter DG Plus eBook-Package 2016 9783110701005 Title is part of eBook package: De Gruyter EBOOK PACKAGE COMPLETE 2016 9783110485103 ZDB-23-DGG Title is part of eBook package: De Gruyter EBOOK PACKAGE Engineering, Computer Sciences 2016 9783110485110 ZDB-23-DEI EPUB 9781501501555 print 9781501510502 https://doi.org/10.1515/9781501501531 https://www.degruyter.com/isbn/9781501501531 Cover https://www.degruyter.com/cover/covers/9781501501531.jpg |
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Abraham, Billion, Abraham, Billion, Abraham, Billion. Chang, Kuan-Chang, Chang, Kuan-Chang, Chang, Kuan-Chang. Chang, Ting-Chang, Chang, Ting-Chang, Chang, Ting-Chang. Chang, Yao-Feng, Chang, Yao-Feng, Chang, Yao-Feng. Chen, Poki, Chen, Poki, Chen, Poki. Chen, Shen-Li, Chen, Shen-Li, Chen, Shen-Li. Chen, Yen-Ting, Chen, Yen-Ting, Chen, Yen-Ting. Chen, Ying-Chen, Chen, Ying-Chen, Chen, Ying-Chen. Chung, Yung-Hui , Chung, Yung-Hui , Chung, Yung-Hui, Chung, Yung-Hui, Fowler, Burt, Fowler, Burt, Fowler, Burt. Huang, Shun-Zhao, Huang, Shun-Zhao, Huang, Shun-Zhao. Huang, Yu-Ting, Huang, Yu-Ting, Huang, Yu-Ting. Hwang, Hyunsang, Hwang, Hyunsang, Hwang, Hyunsang. Jiang, Chunsheng, Jiang, Chunsheng, Jiang, Chunsheng. Lee, Jack C. Lee, Jack C., Lee, Jack C., Lee, Tzung-Je, Lee, Tzung-Je, Lee, Tzung-Je. Liang, Renrong, Liang, Renrong, Liang, Renrong. Liaw, Shien-Kuei , Liaw, Shien-Kuei , Lin, Chun-Ju, Lin, Chun-Ju, Lin, Chun-Ju. Liou, Juin J. , Liou, Juin J. , Osintsev, Dmitri, Osintsev, Dmitri, Osintsev, Dmitry. Pan, Chih-Hung, Pan, Chih-Hung, Prakash, Amit, Prakash, Amit, Prakash, Amit. Selberherr, Siegfried . Selberherr, Siegfried, Selberherr, Siegfried, Sverdlov, Viktor, Sverdlov, Viktor, Sverdlov, Viktor. Sze, Simon M. Sze, Simon M., Sze, Simon M., Tsai, Cheng-Hsun, Tsai, Cheng-Hsun, Tsai, Cheng-Hsun. Tsai, Tsung-Ming, Tsai, Tsung-Ming, Tsai, Tsung-Ming. Wang, Jing, Wang, Jing, Wang, Jing. Wang, Yanzhen, Wang, Yanzhen, Wang, Yanzhen. Widodo, Arif, Widodo, Arif, Widodo, Arif. Wu, Chang-Hsi, Wu, Chang-Hsi, Wu, Chang-Hsi. Wu, Xiaohan, Wu, Xiaohan, Wu, Xiaohan. Xu, Jun, Xu, Jun, Xu, Jun. Xue, Fei, Xue, Fei, Xue, Fei. Yen, Chia-Wei, Yen, Chia-Wei, Yen, Chia-Wei. You, Hong-Cheng, You, Hong-Cheng, You, Hong-Cheng. Zhou, Fei, Zhou, Fei, Zhou, Fei. |
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Abraham, Billion, Abraham, Billion, Abraham, Billion. Chang, Kuan-Chang, Chang, Kuan-Chang, Chang, Kuan-Chang. Chang, Ting-Chang, Chang, Ting-Chang, Chang, Ting-Chang. Chang, Yao-Feng, Chang, Yao-Feng, Chang, Yao-Feng. Chen, Poki, Chen, Poki, Chen, Poki. Chen, Shen-Li, Chen, Shen-Li, Chen, Shen-Li. Chen, Yen-Ting, Chen, Yen-Ting, Chen, Yen-Ting. Chen, Ying-Chen, Chen, Ying-Chen, Chen, Ying-Chen. Chung, Yung-Hui , Chung, Yung-Hui , Chung, Yung-Hui, Chung, Yung-Hui, Fowler, Burt, Fowler, Burt, Fowler, Burt. Huang, Shun-Zhao, Huang, Shun-Zhao, Huang, Shun-Zhao. Huang, Yu-Ting, Huang, Yu-Ting, Huang, Yu-Ting. Hwang, Hyunsang, Hwang, Hyunsang, Hwang, Hyunsang. Jiang, Chunsheng, Jiang, Chunsheng, Jiang, Chunsheng. Lee, Jack C. Lee, Jack C., Lee, Jack C., Lee, Tzung-Je, Lee, Tzung-Je, Lee, Tzung-Je. Liang, Renrong, Liang, Renrong, Liang, Renrong. Liaw, Shien-Kuei , Liaw, Shien-Kuei , Lin, Chun-Ju, Lin, Chun-Ju, Lin, Chun-Ju. Liou, Juin J. , Liou, Juin J. , Osintsev, Dmitri, Osintsev, Dmitri, Osintsev, Dmitry. Pan, Chih-Hung, Pan, Chih-Hung, Prakash, Amit, Prakash, Amit, Prakash, Amit. Selberherr, Siegfried . Selberherr, Siegfried, Selberherr, Siegfried, Sverdlov, Viktor, Sverdlov, Viktor, Sverdlov, Viktor. Sze, Simon M. Sze, Simon M., Sze, Simon M., Tsai, Cheng-Hsun, Tsai, Cheng-Hsun, Tsai, Cheng-Hsun. Tsai, Tsung-Ming, Tsai, Tsung-Ming, Tsai, Tsung-Ming. Wang, Jing, Wang, Jing, Wang, Jing. Wang, Yanzhen, Wang, Yanzhen, Wang, Yanzhen. Widodo, Arif, Widodo, Arif, Widodo, Arif. Wu, Chang-Hsi, Wu, Chang-Hsi, Wu, Chang-Hsi. Wu, Xiaohan, Wu, Xiaohan, Wu, Xiaohan. Xu, Jun, Xu, Jun, Xu, Jun. Xue, Fei, Xue, Fei, Xue, Fei. Yen, Chia-Wei, Yen, Chia-Wei, Yen, Chia-Wei. You, Hong-Cheng, You, Hong-Cheng, You, Hong-Cheng. Zhou, Fei, Zhou, Fei, Zhou, Fei. |
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author_sort |
Abraham, Billion, |
title |
Nano Devices and Sensors / |
spellingShingle |
Nano Devices and Sensors / Frontmatter -- Editorial/Foreword -- Contents -- Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors |
title_full |
Nano Devices and Sensors / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
title_fullStr |
Nano Devices and Sensors / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
title_full_unstemmed |
Nano Devices and Sensors / ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
title_auth |
Nano Devices and Sensors / |
title_alt |
Frontmatter -- Editorial/Foreword -- Contents -- Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors |
title_new |
Nano Devices and Sensors / |
title_sort |
nano devices and sensors / |
publisher |
De Gruyter, |
publishDate |
2016 |
physical |
1 online resource (VIII, 220 p.) |
contents |
Frontmatter -- Editorial/Foreword -- Contents -- Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors |
isbn |
9781501501531 9783110701005 9783110485103 9783110485110 9781501501555 9781501510502 |
url |
https://doi.org/10.1515/9781501501531 https://www.degruyter.com/isbn/9781501501531 https://www.degruyter.com/cover/covers/9781501501531.jpg |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>10774nam a22015855i 4500</leader><controlfield tag="001">9781501501531</controlfield><controlfield tag="003">DE-B1597</controlfield><controlfield tag="005">20210830012106.0</controlfield><controlfield tag="006">m|||||o||d||||||||</controlfield><controlfield tag="007">cr || ||||||||</controlfield><controlfield tag="008">210830t20162016gw fo d z eng d</controlfield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">(OCoLC)949614513</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781501501531</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/9781501501531</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-B1597)445032</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)948780477</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-B1597</subfield><subfield code="b">eng</subfield><subfield code="c">DE-B1597</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC008090</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="245" ind1="0" ind2="0"><subfield code="a">Nano Devices and Sensors /</subfield><subfield code="c">ed. by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin ;</subfield><subfield code="a">Boston : </subfield><subfield code="b">De Gruyter, </subfield><subfield code="c">[2016]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">©2016</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (VIII, 220 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">text file</subfield><subfield code="b">PDF</subfield><subfield code="2">rda</subfield></datafield><datafield tag="505" ind1="0" ind2="0"><subfield code="t">Frontmatter -- </subfield><subfield code="t">Editorial/Foreword -- </subfield><subfield code="t">Contents -- </subfield><subfield code="t">Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- </subfield><subfield code="t">Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- </subfield><subfield code="t">Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- </subfield><subfield code="t">Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- </subfield><subfield code="t">A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- </subfield><subfield code="t">On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- </subfield><subfield code="t">A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- </subfield><subfield code="t">A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- </subfield><subfield code="t">Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- </subfield><subfield code="t">Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- </subfield><subfield code="t">Editors -- </subfield><subfield code="t">List of authors</subfield></datafield><datafield tag="506" ind1="0" ind2=" "><subfield code="a">restricted access</subfield><subfield code="u">http://purl.org/coar/access_right/c_16ec</subfield><subfield code="f">online access with authorization</subfield><subfield code="2">star</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.</subfield></datafield><datafield tag="538" ind1=" " ind2=" "><subfield code="a">Mode of access: Internet via World Wide Web.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In English.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Description based on online resource; title from PDF title page (publisher's Web site, viewed 30. 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