High-k gate dielectrics for CMOS technology / edited by Gang He and Zhaoqi Sun.

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Bibliographic Details
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TeilnehmendeR:
Year of Publication:2012
Language:English
Online Access:
Physical Description:xxxi, 558 p. :; ill. (some col.)
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Table of Contents:
  • pt. 1. Scaling and challenging of Si-based CMOS
  • pt. 2. High-k deposition and materials characterization
  • pt. 3. Challenge in interface engineering and electrode
  • pt. 4. Development in non-Si-based CMOS technology
  • pt. 5. High-k Application in novel devices
  • pt. 6. Challenge and directions.