High-k gate dielectrics for CMOS technology

High-k gate dielectrics for CMOS technology / edited by Gang He and Zhaoqi Sun.

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ProQuest (Firm)
TeilnehmendeR:
He, Gang.
Sun, Zhaoqi.
ProQuest (Firm)
Year of Publication:2012
Language:English
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Physical Description:xxxi, 558 p. :; ill. (some col.)
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id 500956000
ctrlnum (MiAaPQ)500956000
(Au-PeEL)EBL956000
(CaPaEBR)ebr10653595
(CaONFJC)MIL372274
(OCoLC)798536325
collection bib_alma
fullrecord <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01624nam a2200373 a 4500</leader><controlfield tag="001">500956000</controlfield><controlfield tag="003">MiAaPQ</controlfield><controlfield tag="005">20200520144314.0</controlfield><controlfield tag="006">m o d | </controlfield><controlfield tag="007">cr cn|||||||||</controlfield><controlfield tag="008">130212s2012 gw a sb 001 0 eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783527330324</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783527646371 (electronic bk.)</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(MiAaPQ)500956000</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(Au-PeEL)EBL956000</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CaPaEBR)ebr10653595</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CaONFJC)MIL372274</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)798536325</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">MiAaPQ</subfield><subfield code="c">MiAaPQ</subfield><subfield code="d">MiAaPQ</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">QC585</subfield><subfield code="b">.H54 2012</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">538.24</subfield><subfield code="2">23</subfield></datafield><datafield tag="245" ind1="0" ind2="0"><subfield code="a">High-k gate dielectrics for CMOS technology</subfield><subfield code="h">[electronic resource] /</subfield><subfield code="c">edited by Gang He and Zhaoqi Sun.</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">Weinheim :</subfield><subfield code="b">Wiley-VCH,</subfield><subfield code="c">2012.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xxxi, 558 p. :</subfield><subfield code="b">ill. (some col.)</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="a">Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Dielectrics.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Metal oxide semiconductors, Complementary.</subfield></datafield><datafield tag="655" ind1=" " ind2="4"><subfield code="a">Electronic books.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">He, Gang.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, Zhaoqi.</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">ProQuest (Firm)</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=956000</subfield><subfield code="z">Click to View</subfield></datafield></record></collection>
record_format marc
spelling High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun.
Weinheim : Wiley-VCH, 2012.
xxxi, 558 p. : ill. (some col.)
Includes bibliographical references and index.
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Dielectrics.
Metal oxide semiconductors, Complementary.
Electronic books.
He, Gang.
Sun, Zhaoqi.
ProQuest (Firm)
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=956000 Click to View
language English
format Electronic
eBook
author2 He, Gang.
Sun, Zhaoqi.
ProQuest (Firm)
author_facet He, Gang.
Sun, Zhaoqi.
ProQuest (Firm)
ProQuest (Firm)
author2_variant g h gh
z s zs
author2_role TeilnehmendeR
TeilnehmendeR
TeilnehmendeR
author_corporate ProQuest (Firm)
author_sort He, Gang.
title High-k gate dielectrics for CMOS technology
spellingShingle High-k gate dielectrics for CMOS technology
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
title_full High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun.
title_fullStr High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun.
title_full_unstemmed High-k gate dielectrics for CMOS technology [electronic resource] / edited by Gang He and Zhaoqi Sun.
title_auth High-k gate dielectrics for CMOS technology
title_new High-k gate dielectrics for CMOS technology
title_sort high-k gate dielectrics for cmos technology
publisher Wiley-VCH,
publishDate 2012
physical xxxi, 558 p. : ill. (some col.)
contents pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
isbn 9783527646371 (electronic bk.)
callnumber-first Q - Science
callnumber-subject QC - Physics
callnumber-label QC585
callnumber-sort QC 3585 H54 42012
genre Electronic books.
genre_facet Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=956000
illustrated Illustrated
dewey-hundreds 500 - Science
dewey-tens 530 - Physics
dewey-ones 538 - Magnetism
dewey-full 538.24
dewey-sort 3538.24
dewey-raw 538.24
dewey-search 538.24
oclc_num 798536325
work_keys_str_mv AT hegang highkgatedielectricsforcmostechnology
AT sunzhaoqi highkgatedielectricsforcmostechnology
AT proquestfirm highkgatedielectricsforcmostechnology
status_str n
ids_txt_mv (MiAaPQ)500956000
(Au-PeEL)EBL956000
(CaPaEBR)ebr10653595
(CaONFJC)MIL372274
(OCoLC)798536325
is_hierarchy_title High-k gate dielectrics for CMOS technology
author2_original_writing_str_mv noLinkedField
noLinkedField
noLinkedField
_version_ 1792330732940558336

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