Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / / Ekaterina Yurchuk.

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Place / Publishing House:Berlin : : Logos Verlag,, [2015]
Year of Publication:2015
Language:English
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Physical Description:1 online resource (x, 170 pages)
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spelling Yurchuk, Ekaterina, author.
Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / Ekaterina Yurchuk.
Berlin : Logos Verlag, [2015]
1 online resource (x, 170 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Description based on print version record.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2018. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Hafnium.
Ferroelectric crystals.
Electronic books.
Print version: Yurchuk, Ekaterina. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films. Berlin : Logos Verlag, [2015] x, 170 pages 9783832540036 (DLC) 2016440253
ProQuest (Firm)
https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5247140 Click to View
language English
format eBook
author Yurchuk, Ekaterina,
spellingShingle Yurchuk, Ekaterina,
Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /
author_facet Yurchuk, Ekaterina,
author_variant e y ey
author_role VerfasserIn
author_sort Yurchuk, Ekaterina,
title Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /
title_full Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / Ekaterina Yurchuk.
title_fullStr Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / Ekaterina Yurchuk.
title_full_unstemmed Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / Ekaterina Yurchuk.
title_auth Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /
title_new Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /
title_sort electrical characterisation of ferroelectric field effect transistors based on ferroelectric hfo2 thin films /
publisher Logos Verlag,
publishDate 2015
physical 1 online resource (x, 170 pages)
isbn 9783832594787 (e-book)
9783832540036
callnumber-first Q - Science
callnumber-subject QD - Chemistry
callnumber-label QD181
callnumber-sort QD 3181 H5 Y873 42015
genre Electronic books.
genre_facet Electronic books.
url https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=5247140
illustrated Not Illustrated
dewey-hundreds 600 - Technology
dewey-tens 660 - Chemical engineering
dewey-ones 661 - Industrial chemicals
dewey-full 661.0514
dewey-sort 3661.0514
dewey-raw 661.0514
dewey-search 661.0514
oclc_num 1021808362
work_keys_str_mv AT yurchukekaterina electricalcharacterisationofferroelectricfieldeffecttransistorsbasedonferroelectrichfo2thinfilms
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is_hierarchy_title Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films /
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