Device characterization and modeling of large-size GaN HEMTs / Jaime Alberto Zamudio Flores.
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| TeilnehmendeR: | |
| Year of Publication: | 2012 |
| Language: | English |
| Online Access: | |
| Physical Description: | xxxiii, 221 p. :; ill. |
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| 001 | 5003320073 | ||
| 003 | MiAaPQ | ||
| 005 | 20200520144314.0 | ||
| 006 | m o d | | ||
| 007 | cr cn||||||||| | ||
| 008 | 130822s2012 gw ad sbm 000 0 eng d | ||
| 020 | |z 9783862193646 | ||
| 020 | |z 9783862193653 (e-book) | ||
| 035 | |a (MiAaPQ)5003320073 | ||
| 035 | |a (Au-PeEL)EBL3320073 | ||
| 035 | |a (CaPaEBR)ebr10745533 | ||
| 035 | |a (OCoLC)859157541 | ||
| 040 | |a MiAaPQ |c MiAaPQ |d MiAaPQ | ||
| 050 | 4 | |a TK7871.95 |b .F56 2012 | |
| 100 | 1 | |a Flores, Jaime Alberto Zamudio. | |
| 245 | 1 | 0 | |a Device characterization and modeling of large-size GaN HEMTs |h [electronic resource] / |c Jaime Alberto Zamudio Flores. |
| 260 | |a Kassel : |b Kassel University Press, |c 2012. | ||
| 300 | |a xxxiii, 221 p. : |b ill. | ||
| 502 | |a Dissertation--Kassel Univ., 2012. | ||
| 504 | |a Includes bibliographical references. | ||
| 533 | |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. | ||
| 650 | 0 | |a Modulation-doped field-effect transistors. | |
| 650 | 0 | |a Gallium nitride. | |
| 650 | 0 | |a Wide gap semiconductors. | |
| 655 | 4 | |a Electronic books. | |
| 710 | 2 | |a ProQuest (Firm) | |
| 856 | 4 | 0 | |u https://ebookcentral.proquest.com/lib/oeawat/detail.action?docID=3320073 |z Click to View |