Epitaxial Growth and Characterization of SiC for High Power Devices.
Saved in:
Superior document: | Linköping Studies in Science and Technology. Dissertations Series ; v.1243 |
---|---|
: | |
Place / Publishing House: | Linköping : : Linkopings Universitet,, 2009. {copy}2009. |
Year of Publication: | 2009 |
Edition: | 1st ed. |
Language: | English |
Series: | Linköping Studies in Science and Technology. Dissertations Series
|
Online Access: | |
Physical Description: | 1 online resource (93 pages) |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces / / Chao Xia.
by: Xia, Chao,
Published: (2015.) -
Fundamentals and Recent Advances in Epitaxial Graphene on SiC
by: Yakimova, Rositsa
Published: (2021) -
SiC materials and devices. / Vol. 1 / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.
Published: (2006.) -
SiC materials and devices / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.
Published: (2007.) -
CVD Growth of SiC for High-Power and High-frequency Applications.
by: Karhu, Robin.
Published: (2019.)