Technology evolution for silicon nano-electronics : selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan / / edited by Seiichi Miyazaki and Hitoshi Tabata.
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| Year of Publication: | 2011 |
| Language: | English |
| Series: | Key engineering materials,
v. 470 |
| Online Access: | |
| Physical Description: | xi, 234 p. :; ill. |
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Table of Contents:
- High Mobility Ge-Based CMOS Device Technologies
- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator
- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices
- Functional Device Applications of Nanosilicon
- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
- First-Principles Calculations of the Dielectric Constant for the GeO2 Films
- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory
- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering
- Resistive Memory Utilizing Ferritin Protein with Nano Particle
- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction
- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process
- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation
- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction
- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures
- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices
- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
- Structural Change during the Formation of Directly Bonded Silicon Substrates
- Microscopic Structure of Directly Bonded Silicon Substrates
- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
- Influences of Carrier Transport on Drain-Current Variability of MOSFETs
- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers
- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs
- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs
- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors
- Interconnect Design Challenges in Nano CMOS Circuit.