Radiation Tolerant Electronics. / Volume II / / Paul Leroux.
Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation har...
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Place / Publishing House: | Basel : : MDPI - Multidisciplinary Digital Publishing Institute,, 2023. |
Year of Publication: | 2023 |
Language: | English |
Physical Description: | 1 online resource (182 pages) |
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Leroux, Paul, author. Radiation Tolerant Electronics. Volume II / Paul Leroux. Basel : MDPI - Multidisciplinary Digital Publishing Institute, 2023. 1 online resource (182 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier Description based on online resource; title from PDF title page (MDPI - Multidisciplinary Digital Publishing Institute, viewed March 23, 2023). Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects. About the Editor vii -- Preface to "Radiation Tolerant Electronics, Volume II" ix -- Radiation-Tolerant Electronics 1 -- SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops 5 -- Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis 17 -- A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design 25 -- TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology 37 -- Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS 51 -- Novel Full TMR Placement Techniques for High-Speed Radiation Tolerant Digital Integrated Circuits 67 -- A High-Reliability Redundancy Scheme for Design of Radiation-Tolerant Half-Duty Limited DC-DC Converters 77 -- A Virtual Device for Simulation-Based Fault Injection 97 -- Comparison of the Total Ionizing Dose Sensitivity of a System in Package Point of Load Converter Using Both Component- and System-Level Test Approaches 111-- Radiation Qualification by Means of the System-Level Testing: Opportunities and Limitations -- TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials 139 -- Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies 149 -- Quantitative Research on Generalized Linear Modeling of SEU and Test Programs Based on Small Sample Data 161. Radiation. 3-0365-6445-4 |
language |
English |
format |
eBook |
author |
Leroux, Paul, |
spellingShingle |
Leroux, Paul, Radiation Tolerant Electronics. About the Editor vii -- Preface to "Radiation Tolerant Electronics, Volume II" ix -- Radiation-Tolerant Electronics 1 -- SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops 5 -- Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis 17 -- A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design 25 -- TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology 37 -- Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS 51 -- Novel Full TMR Placement Techniques for High-Speed Radiation Tolerant Digital Integrated Circuits 67 -- A High-Reliability Redundancy Scheme for Design of Radiation-Tolerant Half-Duty Limited DC-DC Converters 77 -- A Virtual Device for Simulation-Based Fault Injection 97 -- Comparison of the Total Ionizing Dose Sensitivity of a System in Package Point of Load Converter Using Both Component- and System-Level Test Approaches 111-- Radiation Qualification by Means of the System-Level Testing: Opportunities and Limitations -- TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials 139 -- Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies 149 -- Quantitative Research on Generalized Linear Modeling of SEU and Test Programs Based on Small Sample Data 161. |
author_facet |
Leroux, Paul, |
author_variant |
p l pl |
author_role |
VerfasserIn |
author_sort |
Leroux, Paul, |
title |
Radiation Tolerant Electronics. |
title_full |
Radiation Tolerant Electronics. Volume II / Paul Leroux. |
title_fullStr |
Radiation Tolerant Electronics. Volume II / Paul Leroux. |
title_full_unstemmed |
Radiation Tolerant Electronics. Volume II / Paul Leroux. |
title_auth |
Radiation Tolerant Electronics. |
title_new |
Radiation Tolerant Electronics. |
title_sort |
radiation tolerant electronics. |
publisher |
MDPI - Multidisciplinary Digital Publishing Institute, |
publishDate |
2023 |
physical |
1 online resource (182 pages) |
contents |
About the Editor vii -- Preface to "Radiation Tolerant Electronics, Volume II" ix -- Radiation-Tolerant Electronics 1 -- SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops 5 -- Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis 17 -- A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design 25 -- TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology 37 -- Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS 51 -- Novel Full TMR Placement Techniques for High-Speed Radiation Tolerant Digital Integrated Circuits 67 -- A High-Reliability Redundancy Scheme for Design of Radiation-Tolerant Half-Duty Limited DC-DC Converters 77 -- A Virtual Device for Simulation-Based Fault Injection 97 -- Comparison of the Total Ionizing Dose Sensitivity of a System in Package Point of Load Converter Using Both Component- and System-Level Test Approaches 111-- Radiation Qualification by Means of the System-Level Testing: Opportunities and Limitations -- TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials 139 -- Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies 149 -- Quantitative Research on Generalized Linear Modeling of SEU and Test Programs Based on Small Sample Data 161. |
isbn |
3-0365-6444-6 3-0365-6445-4 |
callnumber-first |
Q - Science |
callnumber-subject |
QC - Physics |
callnumber-label |
QC475 |
callnumber-sort |
QC 3475 L476 42023 |
illustrated |
Not Illustrated |
dewey-hundreds |
500 - Science |
dewey-tens |
530 - Physics |
dewey-ones |
539 - Modern physics |
dewey-full |
539.2 |
dewey-sort |
3539.2 |
dewey-raw |
539.2 |
dewey-search |
539.2 |
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