Recent Advances in Thin Film Electronic Devices / / Chengyuan Dong.
This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Spe...
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Place / Publishing House: | Basel : : MDPI - Multidisciplinary Digital Publishing Institute,, 2022. |
Year of Publication: | 2022 |
Language: | English |
Physical Description: | 1 online resource (152 pages) |
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Dong, Chengyuan, author. Recent Advances in Thin Film Electronic Devices / Chengyuan Dong. Basel : MDPI - Multidisciplinary Digital Publishing Institute, 2022. 1 online resource (152 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier Description based on publisher supplied metadata and other sources. This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on. In English. About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor. Energy industries. 3-0365-5293-6 |
language |
English |
format |
eBook |
author |
Dong, Chengyuan, |
spellingShingle |
Dong, Chengyuan, Recent Advances in Thin Film Electronic Devices / About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor. |
author_facet |
Dong, Chengyuan, |
author_variant |
c d cd |
author_role |
VerfasserIn |
author_sort |
Dong, Chengyuan, |
title |
Recent Advances in Thin Film Electronic Devices / |
title_full |
Recent Advances in Thin Film Electronic Devices / Chengyuan Dong. |
title_fullStr |
Recent Advances in Thin Film Electronic Devices / Chengyuan Dong. |
title_full_unstemmed |
Recent Advances in Thin Film Electronic Devices / Chengyuan Dong. |
title_auth |
Recent Advances in Thin Film Electronic Devices / |
title_new |
Recent Advances in Thin Film Electronic Devices / |
title_sort |
recent advances in thin film electronic devices / |
publisher |
MDPI - Multidisciplinary Digital Publishing Institute, |
publishDate |
2022 |
physical |
1 online resource (152 pages) |
contents |
About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor. |
isbn |
3-0365-5293-6 |
callnumber-first |
H - Social Science |
callnumber-subject |
HD - Industries, Land Use, Labor |
callnumber-label |
HD9502 |
callnumber-sort |
HD 49502 A2 D664 42022 |
illustrated |
Not Illustrated |
dewey-hundreds |
300 - Social sciences |
dewey-tens |
330 - Economics |
dewey-ones |
333 - Economics of land & energy |
dewey-full |
333.79 |
dewey-sort |
3333.79 |
dewey-raw |
333.79 |
dewey-search |
333.79 |
work_keys_str_mv |
AT dongchengyuan recentadvancesinthinfilmelectronicdevices |
status_str |
n |
ids_txt_mv |
(CKB)5860000000259553 (NjHacI)995860000000259553 (EXLCZ)995860000000259553 |
carrierType_str_mv |
cr |
is_hierarchy_title |
Recent Advances in Thin Film Electronic Devices / |
_version_ |
1764995116515196928 |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02878nam a2200301 i 4500</leader><controlfield tag="001">993567754304498</controlfield><controlfield tag="005">20230328034538.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr |||||||||||</controlfield><controlfield tag="008">230328s2022 sz o 000 0 eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)5860000000259553</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(NjHacI)995860000000259553</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)995860000000259553</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">NjHacI</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="c">NjHacl</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">HD9502.A2</subfield><subfield code="b">.D664 2022</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">333.79</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dong, Chengyuan,</subfield><subfield code="e">author.</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Recent Advances in Thin Film Electronic Devices /</subfield><subfield code="c">Chengyuan Dong.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Basel :</subfield><subfield code="b">MDPI - Multidisciplinary Digital Publishing Institute,</subfield><subfield code="c">2022.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (152 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="588" ind1=" " ind2=" "><subfield code="a">Description based on publisher supplied metadata and other sources.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In English.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Energy industries.</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-0365-5293-6</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2023-04-15 12:02:34 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2022-11-14 04:01:55 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&portfolio_pid=5341095800004498&Force_direct=true</subfield><subfield code="Z">5341095800004498</subfield><subfield code="8">5341095800004498</subfield></datafield></record></collection> |