Recent Advances in Thin Film Electronic Devices / / Chengyuan Dong.

This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Spe...

Full description

Saved in:
Bibliographic Details
VerfasserIn:
Place / Publishing House:Basel : : MDPI - Multidisciplinary Digital Publishing Institute,, 2022.
Year of Publication:2022
Language:English
Physical Description:1 online resource (152 pages)
Tags: Add Tag
No Tags, Be the first to tag this record!
id 993567754304498
ctrlnum (CKB)5860000000259553
(NjHacI)995860000000259553
(EXLCZ)995860000000259553
collection bib_alma
record_format marc
spelling Dong, Chengyuan, author.
Recent Advances in Thin Film Electronic Devices / Chengyuan Dong.
Basel : MDPI - Multidisciplinary Digital Publishing Institute, 2022.
1 online resource (152 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Description based on publisher supplied metadata and other sources.
This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on.
In English.
About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor.
Energy industries.
3-0365-5293-6
language English
format eBook
author Dong, Chengyuan,
spellingShingle Dong, Chengyuan,
Recent Advances in Thin Film Electronic Devices /
About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor.
author_facet Dong, Chengyuan,
author_variant c d cd
author_role VerfasserIn
author_sort Dong, Chengyuan,
title Recent Advances in Thin Film Electronic Devices /
title_full Recent Advances in Thin Film Electronic Devices / Chengyuan Dong.
title_fullStr Recent Advances in Thin Film Electronic Devices / Chengyuan Dong.
title_full_unstemmed Recent Advances in Thin Film Electronic Devices / Chengyuan Dong.
title_auth Recent Advances in Thin Film Electronic Devices /
title_new Recent Advances in Thin Film Electronic Devices /
title_sort recent advances in thin film electronic devices /
publisher MDPI - Multidisciplinary Digital Publishing Institute,
publishDate 2022
physical 1 online resource (152 pages)
contents About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor.
isbn 3-0365-5293-6
callnumber-first H - Social Science
callnumber-subject HD - Industries, Land Use, Labor
callnumber-label HD9502
callnumber-sort HD 49502 A2 D664 42022
illustrated Not Illustrated
dewey-hundreds 300 - Social sciences
dewey-tens 330 - Economics
dewey-ones 333 - Economics of land & energy
dewey-full 333.79
dewey-sort 3333.79
dewey-raw 333.79
dewey-search 333.79
work_keys_str_mv AT dongchengyuan recentadvancesinthinfilmelectronicdevices
status_str n
ids_txt_mv (CKB)5860000000259553
(NjHacI)995860000000259553
(EXLCZ)995860000000259553
carrierType_str_mv cr
is_hierarchy_title Recent Advances in Thin Film Electronic Devices /
_version_ 1764995116515196928
fullrecord <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02878nam a2200301 i 4500</leader><controlfield tag="001">993567754304498</controlfield><controlfield tag="005">20230328034538.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr |||||||||||</controlfield><controlfield tag="008">230328s2022 sz o 000 0 eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(CKB)5860000000259553</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(NjHacI)995860000000259553</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(EXLCZ)995860000000259553</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">NjHacI</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="c">NjHacl</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">HD9502.A2</subfield><subfield code="b">.D664 2022</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">333.79</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dong, Chengyuan,</subfield><subfield code="e">author.</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Recent Advances in Thin Film Electronic Devices /</subfield><subfield code="c">Chengyuan Dong.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Basel :</subfield><subfield code="b">MDPI - Multidisciplinary Digital Publishing Institute,</subfield><subfield code="c">2022.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (152 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="588" ind1=" " ind2=" "><subfield code="a">Description based on publisher supplied metadata and other sources.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This reprint is a collection of the papers from the Special Issue "Recent Advances in Thin Film Electronic Devices" in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In English.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">About the Editor -- Preface to "Recent Advances in Thin Film Electronic Devices" -- Editorial for the Special Issue on Recent Advances in Thin Film Electronic Devices -- Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes -- Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation -- Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs -- An Artificial Synapse Based on CsPbI3 Thin Film -- A Reconfigurable Surface-Plasmon-Based Filter/Sensor Using D-Shaped Photonic Crystal Fiber -- Effect of the Deposition Time on the Structural, 3D Vertical Growth, and Electrical Conductivity Properties of Electrodeposited Anatase-Rutile Nanostructured Thin Films -- Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method -- Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers -- N-Type Nanosheet FETs without Ground Plane Region for Process Simplification -- Efficient Multi-Material Structured Thin Film Transfer to Elastomers for Stretchable Electronic Devices -- Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Energy industries.</subfield></datafield><datafield tag="776" ind1=" " ind2=" "><subfield code="z">3-0365-5293-6</subfield></datafield><datafield tag="906" ind1=" " ind2=" "><subfield code="a">BOOK</subfield></datafield><datafield tag="ADM" ind1=" " ind2=" "><subfield code="b">2023-04-15 12:02:34 Europe/Vienna</subfield><subfield code="f">system</subfield><subfield code="c">marc21</subfield><subfield code="a">2022-11-14 04:01:55 Europe/Vienna</subfield><subfield code="g">false</subfield></datafield><datafield tag="AVE" ind1=" " ind2=" "><subfield code="P">DOAB Directory of Open Access Books</subfield><subfield code="x">https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&amp;portfolio_pid=5341095800004498&amp;Force_direct=true</subfield><subfield code="Z">5341095800004498</subfield><subfield code="8">5341095800004498</subfield></datafield></record></collection>