Electronic Nanodevices
The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10...
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Bartolomeo, Antonio edt Electronic Nanodevices MDPI - Multidisciplinary Digital Publishing Institute 2022 1 electronic resource (240 p.) text txt rdacontent computer c rdamedia online resource cr rdacarrier The start of high-volume production of field-effect transistors with a feature size below 100 nm at the end of the 20th century signaled the transition from microelectronics to nanoelectronics. Since then, downscaling in the semiconductor industry has continued until the recent development of sub-10 nm technologies. The new phenomena and issues as well as the technological challenges of the fabrication and manipulation at the nanoscale have spurred an intense theoretical and experimental research activity. New device structures, operating principles, materials, and measurement techniques have emerged, and new approaches to electronic transport and device modeling have become necessary. Examples are the introduction of vertical MOSFETs in addition to the planar ones to enable the multi-gate approach as well as the development of new tunneling, high-electron mobility, and single-electron devices. The search for new materials such as nanowires, nanotubes, and 2D materials for the transistor channel, dielectrics, and interconnects has been part of the process. New electronic devices, often consisting of nanoscale heterojunctions, have been developed for light emission, transmission, and detection in optoelectronic and photonic systems, as well for new chemical, biological, and environmental sensors. This Special Issue focuses on the design, fabrication, modeling, and demonstration of nanodevices for electronic, optoelectronic, and sensing applications. English Technology: general issues bicssc History of engineering & technology bicssc concentrator systems GaInP/GaInAs/Ge multi-junction photovoltaics solar cells space triple-junction FeFET ferroelectric nonvolatile semiconductor memory SBT nanoantennas optics optoelectronic devices photovoltaic technology rectennas resistive memories thermal model heat equation thermal conductivity circuit simulation compact modeling resistive switching nanodevices power conversion efficiency MXenes electrodes additives HTL/ETL design of experiments GFET graphene high-frequency RF devices tolerance analysis molybdenum oxides green synthesis biological chelator additional capacity anodes lithium-ion batteries carbon nanotube junctionless tunnel field effect transistors chemical doping electrostatic doping NEGF simulation band-to-band tunneling switching performance nanoscale phosphorene black phosphorus nanoribbon edge contact contact resistance quantum transport NEGF metallization broadening zigzag carbon nanotube armchair-edge graphene nanoribbon quantum simulation sub-10 nm phototransistors photosensitivity subthreshold swing GaN HEMTs scaling electron mobility scattering polarization charge 2D materials rhenium selenides ReSe2 field-effect transistor pressure negative photoconductivity 3-0365-5021-6 Bartolomeo, Antonio oth |
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Bartolomeo, Antonio |
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Bartolomeo, Antonio |
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Electronic Nanodevices |
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Electronic Nanodevices |
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Electronic Nanodevices |
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Electronic Nanodevices |
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Electronic Nanodevices |
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Electronic Nanodevices |
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Electronic Nanodevices |
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electronic nanodevices |
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MDPI - Multidisciplinary Digital Publishing Institute |
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2022 |
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1 electronic resource (240 p.) |
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3-0365-5022-4 3-0365-5021-6 |
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AT bartolomeoantonio electronicnanodevices |
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(CKB)5670000000391578 (oapen)https://directory.doabooks.org/handle/20.500.12854/93168 (EXLCZ)995670000000391578 |
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