Fundamentals and Recent Advances in Epitaxial Graphene on SiC
This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...
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Year of Publication: | 2021 |
Language: | English |
Physical Description: | 1 electronic resource (94 p.) |
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100 | 1 | |a Yakimova, Rositsa |4 edt | |
245 | 1 | 0 | |a Fundamentals and Recent Advances in Epitaxial Graphene on SiC |
260 | |a Basel, Switzerland |b MDPI - Multidisciplinary Digital Publishing Institute |c 2021 | ||
300 | |a 1 electronic resource (94 p.) | ||
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520 | |a This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. | ||
546 | |a English | ||
650 | 7 | |a Technology: general issues |2 bicssc | |
653 | |a epitaxial graphene | ||
653 | |a copper | ||
653 | |a redox reaction | ||
653 | |a electrodeposition | ||
653 | |a voltammetry | ||
653 | |a chronoamperometry | ||
653 | |a DFT | ||
653 | |a silicon carbide | ||
653 | |a Raman spectroscopy | ||
653 | |a 2D peak line shape | ||
653 | |a G peak | ||
653 | |a charge density | ||
653 | |a strain | ||
653 | |a atomic layer deposition | ||
653 | |a high-k insulators | ||
653 | |a ion implantation | ||
653 | |a Raman | ||
653 | |a AFM | ||
653 | |a XPS | ||
653 | |a graphene | ||
653 | |a SiC | ||
653 | |a 3C-SiC on Si | ||
653 | |a substrate interaction | ||
653 | |a carrier concentration | ||
653 | |a mobility | ||
653 | |a intercalation | ||
653 | |a buffer layer | ||
653 | |a surface functionalization | ||
653 | |a twistronics | ||
653 | |a twisted bilayer graphene | ||
653 | |a flat band | ||
653 | |a epitaxial graphene on SiC | ||
653 | |a quasi-free-standing graphene | ||
653 | |a monolayer graphene | ||
653 | |a high-temperature sublimation | ||
653 | |a terahertz optical Hall effect | ||
653 | |a free charge carrier properties | ||
653 | |a sublimation | ||
653 | |a electronic properties | ||
653 | |a material engineering | ||
653 | |a deposition | ||
776 | |z 3-0365-1179-2 | ||
776 | |z 3-0365-1178-4 | ||
700 | 1 | |a Shtepliuk, Ivan |4 edt | |
700 | 1 | |a Yakimova, Rositsa |4 oth | |
700 | 1 | |a Shtepliuk, Ivan |4 oth | |
906 | |a BOOK | ||
ADM | |b 2023-12-15 05:48:03 Europe/Vienna |f system |c marc21 |a 2022-04-04 09:22:53 Europe/Vienna |g false | ||
AVE | |i DOAB Directory of Open Access Books |P DOAB Directory of Open Access Books |x https://eu02.alma.exlibrisgroup.com/view/uresolver/43ACC_OEAW/openurl?u.ignore_date_coverage=true&portfolio_pid=5338219000004498&Force_direct=true |Z 5338219000004498 |b Available |8 5338219000004498 |